Optical gain analysis of polarization-insensitive semiconductor optical amplifiers with strained quantum wells

2004 ◽  
Author(s):  
Rodica Matei ◽  
Romain Maciejko ◽  
Alain Champagne
Keyword(s):  
Quantum Wells ◽  
Optical Amplifiers ◽  
Optical Gain ◽  
Semiconductor Optical Amplifiers ◽  
Strained Quantum Wells ◽  
Polarization Insensitive

Polarization-insensitive optical amplifiers using tensile-strained quantum wells

2002 ◽  
Author(s):  
T. Kamijoh ◽  
H. Horikawa ◽  
M. Nakajima ◽  
C.Q. Xu ◽  
Y. Matsui ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Amplifiers ◽  
Strained Quantum Wells ◽  
Polarization Insensitive

Large optical bandwidth and polarization insensitive semiconductor optical amplifiers using strained InGaAsP quantum wells

2010 ◽  
Vol 97 (12) ◽  
pp. 121101 ◽  
Author(s):  
H. Carrère ◽  
V. G. Truong ◽  
X. Marie ◽  
R. Brenot ◽  
G. De Valicourt ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Polarization Insensitive ◽  
Optical Bandwidth

scholarly journals Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers

2021 ◽  
Vol 11 (23) ◽  
pp. 11096
Author(s):  
Joan Manel Ramírez ◽  
Pierre Fanneau de la Horie ◽  
Jean-Guy Provost ◽  
Stéphane Malhouitre ◽  
Delphine Néel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Networks ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Optical Amplifier ◽  
Silicon On Insulator ◽  
Total Power ◽  
Multiple Quantum ◽  
Total Power Consumption ◽  
On Chip

Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm2, a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs).

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