Reduced crosstalk semiconductor optical amplifiers based on Type-II quantum wells

2002 ◽  
Vol 14 (3) ◽  
pp. 278-280 ◽  
Author(s):  
J.B. Khurgin ◽  
I. Vurgraftman ◽  
J.R. Meyer ◽  
Shuangmei Xu ◽  
J.U. Kang
Keyword(s):  
Quantum Wells ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Type Ii ◽  
Type Ii Quantum Wells

Mid-IR interband cascade electroluminescence in type-II quantum wells

1996 ◽  
Vol 32 (17) ◽  
pp. 1621 ◽  
Author(s):  
R.Q. Yang ◽  
C.-H. Lin ◽  
P.C. Chang ◽  
S.J. Murry ◽  
D. Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Type Ii Quantum Wells

cw and femtosecond optical nonlinearities of type-II quantum wells

1991 ◽  
Vol 66 (10) ◽  
pp. 1358-1361 ◽  
Author(s):  
G. R. Olbright ◽  
W. S. Fu ◽  
A. Owyoung ◽  
J. F. Klem ◽  
R. Binder ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Nonlinearities ◽  
Type Ii ◽  
Type Ii Quantum Wells

Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates

2002 ◽  
Vol 41 (Part 2, No. 10A) ◽  
pp. L1040-L1042 ◽  
Author(s):  
Makoto Kudo ◽  
Kiyoshi Ouchi ◽  
Jun-ichi Kasai ◽  
Tomoyoshi Mishima
Keyword(s):  
Quantum Wells ◽  
Lattice Strain ◽  
Type Ii ◽  
Long Wavelength ◽  
Gaas Substrates ◽  
Type Ii Quantum Wells

scholarly journals Mid-infrared photoluminescence from structures with InAs/GaSb type II quantum wells

2015 ◽  
Vol 643 ◽  
pp. 012078 ◽  
Author(s):  
A V Selivanov ◽  
I S Makhov ◽  
V Yu Panevin ◽  
A N Sofronov ◽  
D A Firsov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells

scholarly journals Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers

2021 ◽  
Vol 11 (23) ◽  
pp. 11096
Author(s):  
Joan Manel Ramírez ◽  
Pierre Fanneau de la Horie ◽  
Jean-Guy Provost ◽  
Stéphane Malhouitre ◽  
Delphine Néel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Networks ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Optical Amplifier ◽  
Silicon On Insulator ◽  
Total Power ◽  
Multiple Quantum ◽  
Total Power Consumption ◽  
On Chip

Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm2, a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs).

Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

2011 ◽  
Vol 33 (11) ◽  
pp. 1817-1819 ◽  
Author(s):  
G. Sęk ◽  
F. Janiak ◽  
M. Motyka ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells ◽  
Interband Cascade Lasers ◽  
Cascade Lasers ◽  
Loss Mechanisms
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