scholarly journals Valence hole subbands and optical gain spectra of GaN/Ga1−xAlxN strained quantum wells

1996 ◽  
Vol 80 (6) ◽  
pp. 3471-3478 ◽  
Author(s):  
W. J. Fan ◽  
M. F. Li ◽  
T. C. Chong ◽  
J. B. Xia
Keyword(s):  
Quantum Wells ◽  
Optical Gain ◽  
Strained Quantum Wells ◽  
Gain Spectra

Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

1998 ◽  
Vol 537 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Gain ◽  
Inhomogeneous Broadening ◽  
Localized States ◽  
Quantum Well Structures ◽  
Potential Fluctuation ◽  
Quantum Disk ◽  
Gain Spectra

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

Band structure and optical gain of InGaAsN/GaAsP/GaAs strained quantum wells

2005 ◽  
Vol 2 (8) ◽  
pp. 3023-3026
Author(s):  
H. Carrère ◽  
X. Marie ◽  
J. Barrau ◽  
T. Amand
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain ◽  
Strained Quantum Wells

scholarly journals Effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wells

2003 ◽  
Vol 93 (9) ◽  
pp. 5836-5838 ◽  
Author(s):  
W. J. Fan ◽  
S. T. Ng ◽  
S. F. Yoon ◽  
M. F. Li ◽  
T. C. Chong
Keyword(s):  
Quantum Wells ◽  
Tensile Strain ◽  
Optical Gain ◽  
Gain Spectra
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