Manipulation of chemically amplified resist dissolution rate behavior for improved performance

2000 ◽  
Author(s):  
Medhat A. Toukhy ◽  
Karin R. Schlicht ◽  
Brian Maxwell ◽  
Somboun Chanthalyma
Keyword(s):  
Dissolution Rate ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Rate Behavior ◽  
Improved Performance

Dissolution behavior of chemically amplified resist for advanced mask- and NIL mold-making as studied by dissolution rate monitor

2006 ◽  
Author(s):  
Kazumasa Takeshi ◽  
Kazuto Oono ◽  
Yoshiyuki Negishi ◽  
Daisuke Inokuchi ◽  
Keishi Tanaka ◽  
...  
Keyword(s):  
Dissolution Rate ◽  
Dissolution Behavior ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Mold Making

Chemically Amplified Resist Approaches for E-beam Lithography Mask Fabrication

2001 ◽  
Vol 705 ◽  
Author(s):  
J.R. Maldonado ◽  
M. Angelopoulos ◽  
W. Huang ◽  
R. L. Brainard ◽  
J. M. Guevremont ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Chemical Amplification ◽  
Joint Program ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Si Doped ◽  
Improved Performance ◽  
Mask Fabrication

AbstractThis paper describes stable, high sensitivity (5-10 μC/cm2 at 50 kV) e-beam resist systems utilizing chemical amplification suitable for mask fabrication for device generations below 100 nm. In particular, two resist systems with improved performance for mask fabrication developed in a joint program by Etec, IBM and Shipley will be described: a Si- doped version of the IBM KRS-XE resist (now commercially available) developed at IBM Research, and a new MANA resist developed at Shipley. Commercialization issues for mask e-beam resists also will be discussed.

Chemically amplified resist technology for i-line applications

1998 ◽  
Author(s):  
Medhat A. Toukhy ◽  
Sanjay Malik ◽  
Andrew J. Blakeney ◽  
Karin R. Schlicht
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resist

Sub-150-nm electron-beam lithography using AZPN114 chemically amplified resist

1997 ◽  
Author(s):  
Zheng Cui ◽  
R. A. Moody ◽  
Ian M. Loader ◽  
John G. Watson ◽  
Philip D. Prewett
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

Postexposure Delay Effect on Linewidth Variation in Base Added Chemically Amplified Resist

2000 ◽  
Vol 147 (10) ◽  
pp. 3833 ◽  
Author(s):  
Chin-Yu Ku ◽  
Jia-Min Shieh ◽  
Tsann-Bim Chiou ◽  
Hwang-Kuen Lin ◽  
Tan Fu Lei
Keyword(s):  
Delay Effect ◽  
Chemically Amplified ◽  
Chemically Amplified Resist

Airborne Contamination of a Chemically Amplified Resist. 2. Effect of Polymer Film Properties on Contamination Rate

1994 ◽  
Vol 6 (4) ◽  
pp. 481-488 ◽  
Author(s):  
William D. Hinsberg ◽  
Scott A. MacDonald ◽  
Nicholas J. Clecak ◽  
Clinton D. Snyder
Keyword(s):  
Polymer Film ◽  
Contamination Rate ◽  
Film Properties ◽  
Chemically Amplified ◽  
Airborne Contamination ◽  
Chemically Amplified Resist

Track oriented chemically-amplified resist processes for quarter-micron lithography

1993 ◽  
Author(s):  
Michael T. Reilly ◽  
Azalia A. Krasnoperova ◽  
Quinn J. Leonard ◽  
James W. Taylor ◽  
Shaowie Pan
Keyword(s):  
Chemically Amplified ◽  
Chemically Amplified Resist
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