The relationship between critical dimension shift and diffusion in negative chemically amplified resist systems

Author(s):  
Theodore H. Fedynyshyn
2002 ◽  
Author(s):  
Teruhiko Kumada ◽  
Atsuko Sasahara ◽  
Kazuyuki Maetoko ◽  
Kunihiro Hosono ◽  
Takemichi Honma ◽  
...  

2003 ◽  
Author(s):  
Teruhiko Kumada ◽  
Koji Tange ◽  
Kazuyuki Maetoko ◽  
Kunihiro Hosono ◽  
Masayoshi Tsuzuki ◽  
...  

1993 ◽  
Author(s):  
Theodore H. Fedynyshyn ◽  
Charles R. Szmanda ◽  
Robert F. Blacksmith ◽  
William E. Houck

Author(s):  
Solomon A. Keelson ◽  
Thomas Cudjoe ◽  
Manteaw Joy Tenkoran

The present study investigates diffusion and adoption of corruption and factors that influence the rate of adoption of corruption in Ghana. In the current study, the diffusion and adoption of corruption and the factors that influence the speed with which corruption spreads in society is examined within Ghana as a developing economy. Data from public sector workers in Ghana are used to conduct the study. Our findings based on the results from One Sample T-Test suggest that corruption is perceived to be high in Ghana and diffusion and adoption of corruption has witnessed appreciative increases. Social and institutional factors seem to have a larger influence on the rate of corruption adoption than other factors. These findings indicate the need for theoretical underpinning in policy formulation to face corruption by incorporating the relationship between the social values and institutional failure, as represented by the rate of corruption adoption in developing economies.


Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.


1998 ◽  
Author(s):  
Medhat A. Toukhy ◽  
Sanjay Malik ◽  
Andrew J. Blakeney ◽  
Karin R. Schlicht

1997 ◽  
Author(s):  
Zheng Cui ◽  
R. A. Moody ◽  
Ian M. Loader ◽  
John G. Watson ◽  
Philip D. Prewett

2000 ◽  
Vol 147 (10) ◽  
pp. 3833 ◽  
Author(s):  
Chin-Yu Ku ◽  
Jia-Min Shieh ◽  
Tsann-Bim Chiou ◽  
Hwang-Kuen Lin ◽  
Tan Fu Lei

1994 ◽  
Vol 6 (4) ◽  
pp. 481-488 ◽  
Author(s):  
William D. Hinsberg ◽  
Scott A. MacDonald ◽  
Nicholas J. Clecak ◽  
Clinton D. Snyder

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