Molecular-dynamics simulations of picosecond pulsed laser ablation and desorption of silicon

Author(s):  
Patrick Lorazo ◽  
Laurent J. Lewis ◽  
Michel Meunier
2018 ◽  
Vol 167 ◽  
pp. 03011
Author(s):  
Jenn-Kun Kuo ◽  
Pei-Hsing Huang ◽  
Shih-Kai Chien ◽  
Kuang-Yao Huang ◽  
Kun-Tso Chen

In this study, we employed molecular dynamics (MD) simulations to investigate ablation induced by the application of pulsed laser irradiation to a thin α-Fe substrate. We observed several mechanisms underlying the removal of material, including ultrafast melting, cluster ejection, and thermal vaporization. We also examined the effects of laser fluence on the resulting surface morphology as well as the amount of material ablated and deposited around the craters


2012 ◽  
Author(s):  
Johannes Roth ◽  
Steffen Sonntag ◽  
Johannes Karlin ◽  
Carolina Trichet Paredes ◽  
Marc Sartison ◽  
...  

2012 ◽  
Vol 500 ◽  
pp. 351-356 ◽  
Author(s):  
Zeng Qiang Li ◽  
Jun Wang ◽  
Qi Wu

The mechanism of ultrashort pulsed laser ablation of polycrystalline diamond (PCD) is investigated using molecular dynamics simulation. The simulation model provides a detailed atomic-level description of the laser energy deposition to PCD specimens and is verified by an experiment using 300 fs laser irradiation of a PCD sample. It is found that grain boundaries play an important role in the laser ablation. Melting starts from the grain boundaries since the atoms in these regions have higher potential energy and are melted more easily than the perfect diamond. Non-homogeneous melting then takes place at these places, and the inner crystal grains melt more easily in liquid surroundings presented by the melting grain boundaries. Moreover, the interplay of the two processes, photomechanical spallation and evaporation, are found to account for material removal in ultrashort pulsed laser ablation of PCD.


2005 ◽  
Vol 86 (20) ◽  
pp. 201910 ◽  
Author(s):  
Mauro Boero ◽  
Atsushi Oshiyama ◽  
Pier Luigi Silvestrelli ◽  
Kouichi Murakami

1992 ◽  
Vol 285 ◽  
Author(s):  
H. Feil ◽  
J.S.C. Kools ◽  
J. Dieleman

ABSTRACTMolecular dynamics simulations are performed of Cu thin film growth on Cu (111). Ion-Assisted Deposition is simulated by bombarding the substrate with Cu+ ions with a kinetic energy of 80 eV, while 1 eV Cu atoms are used for the simulation of Laser Ablation Deposition. It appears that Ion-Assisted Deposition leads to sputtering, enhanced surface mobility, surface disorder, mixing and rather deep damage. This is discussed in some detail. Laser Ablation Deposition, using laser fluences just above the ablation threshold, does not lead to damage and mixing. Sharper interfaces and more perfect heterostructures and superlattices can be produced using Laser Ablation Deposition.


2010 ◽  
Vol 59 (8) ◽  
pp. 5681
Author(s):  
Chen Gu-Ran ◽  
Song Chao ◽  
Xu Jun ◽  
Wang Dan-Qing ◽  
Xu Ling ◽  
...  

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