Mechanisms of laser ablation from molecular dynamics simulations: dependence on the initial temperature and pulse duration

1999 ◽  
Vol 69 (7) ◽  
pp. S75-S80 ◽  
Author(s):  
L.V. Zhigilei ◽  
B.J. Garrison
Keyword(s):  
Molecular Dynamics ◽  
Laser Ablation ◽  
Molecular Dynamics Simulations ◽  
Pulse Duration ◽  
Initial Temperature ◽  
Dynamics Simulations

Molecular dynamics simulations studies of laser ablation in metals

2012 ◽  
Author(s):  
Johannes Roth ◽  
Steffen Sonntag ◽  
Johannes Karlin ◽  
Carolina Trichet Paredes ◽  
Marc Sartison ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Laser Ablation ◽  
Molecular Dynamics Simulations ◽  
Dynamics Simulations

Molecular-Dynamics Simulations of Laser-Ablation and Ionassisted Thin Film Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
H. Feil ◽  
J.S.C. Kools ◽  
J. Dieleman
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Laser Ablation ◽  
Molecular Dynamics Simulations ◽  
Film Growth ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Fluences ◽  
Cu Thin Film ◽  
Dynamics Simulations

ABSTRACTMolecular dynamics simulations are performed of Cu thin film growth on Cu (111). Ion-Assisted Deposition is simulated by bombarding the substrate with Cu+ ions with a kinetic energy of 80 eV, while 1 eV Cu atoms are used for the simulation of Laser Ablation Deposition. It appears that Ion-Assisted Deposition leads to sputtering, enhanced surface mobility, surface disorder, mixing and rather deep damage. This is discussed in some detail. Laser Ablation Deposition, using laser fluences just above the ablation threshold, does not lead to damage and mixing. Sharper interfaces and more perfect heterostructures and superlattices can be produced using Laser Ablation Deposition.

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