Amorphous-silicon-based uncooled microbolometer IRFPA

1999 ◽  
Author(s):  
Corrinne Vedel ◽  
Jean-Luc Martin ◽  
Jean-Louis Ouvrier-Buffet ◽  
Jean-Luc Tissot ◽  
Michel Vilain ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Uncooled Microbolometer ◽  
Silicon Based

Low-cost amorphous-silicon-based 160x120 uncooled microbolometer 2D array for high-volume applications

2003 ◽  
Author(s):  
Jean-Luc Tissot ◽  
Astrid Astier ◽  
Jean-Pierre Chatard ◽  
Sebastien Tinnes ◽  
Cyrille Trouilleau ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Low Cost ◽  
High Volume ◽  
Uncooled Microbolometer ◽  
Silicon Based ◽  
2D Array

Low-cost amorphous silicon-based 160x120 uncooled microbolometer 2D array for high-volume applications

2004 ◽  
Author(s):  
Cyrille Trouilleau ◽  
Arnaud Crastes ◽  
Jean-Luc Tissot ◽  
Jean-Pierre Chatard ◽  
Jean-Jacques Yon ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Low Cost ◽  
High Volume ◽  
Uncooled Microbolometer ◽  
Silicon Based ◽  
2D Array

Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Long Term Stability ◽  
Back Reflectors ◽  
Stability Issues ◽  
Silicon Based ◽  
Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

Low Power Pixel-Level ADC Readout Circuit for an Amorphous Silicon-Based Microbolometer

2009 ◽  
Vol E92-C (5) ◽  
pp. 708-712
Author(s):  
Dong-Heon HA ◽  
Chi Ho HWANG ◽  
Yong Soo LEE ◽  
Hee Chul LEE
Keyword(s):  
Low Power ◽  
Amorphous Silicon ◽  
Readout Circuit ◽  
Silicon Based

High switching uniformity and 50 fJ/bit energy consumption achieved in amorphous silicon-based memristive device with an AgInSbTe buffer layer

2021 ◽  
Vol 118 (26) ◽  
pp. 263507
Author(s):  
Yanyun Ren ◽  
Xiaojing Fu ◽  
Zhi Yang ◽  
Ruoyao Sun ◽  
Ya Lin ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Memristive Device ◽  
Silicon Based

Advances in amorphous silicon-based photonic technology

2002 ◽  
Vol 299-302 ◽  
pp. 1267-1271
Author(s):  
C.M Fortmann ◽  
A.H Mahan ◽  
N Hata
Keyword(s):  
Amorphous Silicon ◽  
Silicon Based

Amorphous silicon based large format uncooled FPA microbolometer technology

2008 ◽  
Author(s):  
T. Schimert ◽  
J. Brady ◽  
T. Fagan ◽  
M. Taylor ◽  
W. McCardel ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Large Format ◽  
Silicon Based

Production technology for amorphous silicon-based flexible solar cells

2001 ◽  
Vol 66 (1-4) ◽  
pp. 107-115 ◽  
Author(s):  
Yukimi Ichikawa ◽  
Takashi Yoshida ◽  
Toshio Hama ◽  
Hiroshi Sakai ◽  
Kouichi Harashima
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Production Technology ◽  
Silicon Based
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