High switching uniformity and 50 fJ/bit energy consumption achieved in amorphous silicon-based memristive device with an AgInSbTe buffer layer

2021 ◽  
Vol 118 (26) ◽  
pp. 263507
Author(s):  
Yanyun Ren ◽  
Xiaojing Fu ◽  
Zhi Yang ◽  
Ruoyao Sun ◽  
Ya Lin ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Memristive Device ◽  
Silicon Based

scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

Tungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells

2010 ◽  
Vol 96 (19) ◽  
pp. 193501 ◽  
Author(s):  
Liang Fang ◽  
Seung Jae Baik ◽  
Koeng Su Lim ◽  
Seung Hyup Yoo ◽  
Myung Soo Seo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Tungsten Oxide ◽  
Buffer Layer ◽  
Silicon Based

scholarly journals A buffer-layer/a-SiOx:H(p) window-layer optimization for thin film amorphous silicon based solar cells

2013 ◽  
Vol 546 ◽  
pp. 331-336 ◽  
Author(s):  
Jinjoo Park ◽  
Vinh Ai Dao ◽  
Chonghoon Shin ◽  
Hyeongsik Park ◽  
Minbum Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Window Layer ◽  
Silicon Based

Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Long Term Stability ◽  
Back Reflectors ◽  
Stability Issues ◽  
Silicon Based ◽  
Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

Low Power Pixel-Level ADC Readout Circuit for an Amorphous Silicon-Based Microbolometer

2009 ◽  
Vol E92-C (5) ◽  
pp. 708-712
Author(s):  
Dong-Heon HA ◽  
Chi Ho HWANG ◽  
Yong Soo LEE ◽  
Hee Chul LEE
Keyword(s):  
Low Power ◽  
Amorphous Silicon ◽  
Readout Circuit ◽  
Silicon Based

Advances in amorphous silicon-based photonic technology

2002 ◽  
Vol 299-302 ◽  
pp. 1267-1271
Author(s):  
C.M Fortmann ◽  
A.H Mahan ◽  
N Hata
Keyword(s):  
Amorphous Silicon ◽  
Silicon Based

Amorphous silicon based large format uncooled FPA microbolometer technology

2008 ◽  
Author(s):  
T. Schimert ◽  
J. Brady ◽  
T. Fagan ◽  
M. Taylor ◽  
W. McCardel ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Large Format ◽  
Silicon Based

Production technology for amorphous silicon-based flexible solar cells

2001 ◽  
Vol 66 (1-4) ◽  
pp. 107-115 ◽  
Author(s):  
Yukimi Ichikawa ◽  
Takashi Yoshida ◽  
Toshio Hama ◽  
Hiroshi Sakai ◽  
Kouichi Harashima
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Production Technology ◽  
Silicon Based

scholarly journals Neutron and x-ray Reflectometry Investigations of Amorphous Silicon-based Surface Passivation Layers

2014 ◽  
Vol 55 ◽  
pp. 813-817 ◽  
Author(s):  
Erik S. Marstein ◽  
Ida M. Hasle ◽  
Atle J. Qviller ◽  
Halvard Haug
Keyword(s):  
Amorphous Silicon ◽  
Surface Passivation ◽  
X Ray ◽  
Passivation Layers ◽  
Silicon Based
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