2.3- to 2.7-μm room-temperature cw operation of InGaAsSb/AlGaAsSb broad-contact and single-mode ridge-waveguide SCH-QW diode lasers

1999 ◽  
Author(s):  
Dmitri Z. Garbuzov ◽  
Raymond J. Menna ◽  
Mikhail A. Maiorov ◽  
Hao Lee ◽  
V. Khalfin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Single Mode ◽  
Ridge Waveguide ◽  
Cw Operation

2.3–2.7µm InGaAsSb/AlGaAsSb Broad-Contact and Single-Mode Ridge-Waveguide SCH-QW Diode Lasers Operating in CW Regime at Room Temperature

1999 ◽  
Vol 607 ◽  
Author(s):  
D. Garbuzov ◽  
H. Lee
Keyword(s):  
Quantum Well ◽  
Wavelength Range ◽  
Current Density ◽  
Room Temperature ◽  
Diode Lasers ◽  
Single Mode ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Ridge Waveguide ◽  
Longitudinal Modes

AbstractA new approach in the design of (Al)InGaAsSb/GaSb quantum well separate confinement heterostructure (QW-SCH) diode lasers has led to CW room-temperature lasing up to 2.7 gm. To avoid QW material degradation associated with the miscibility gap in the 2.3–2.7 tim wavelength range, we used highly strained, “quasi-ternary” InxGa1−xSbl−yAsy compounds with 0.25<x<0.38 and y<0.07 as the material for QWs. Very low threshold current density (∼300 A/cm2) and high CW output powers (>100 mW) were obtained from broad contact devices operating in the 2.3–2.6 μm wavelength range. From the spontaneous emission measurements we have identified that the Auger process determines the rate of recombination in quantum well active region over the entire temperature range studied (15– 110 'C) for 2.6 gim lasers and only at temperatures higher than 65 'C for 2.3 pim lasers. If Auger recombination dominates, strong temperature dependence of Auger coefficient leads to the rapid increase of threshold current density with temperature (To ∼40 °C). In the range of 15 – 65 °C for 2.3 gim devicesa monomolecular, non-radiative mechanism dominates and To is about 110 °C. In addition, single-mode CW room temperature ridge-waveguide lasers with wavelength of 2.3-2.55 gim have been fabricated for the first time. The lasers display threshold currents around 50 mA with CW output powers of several milliwatts. Since for a certain range of temperatures and currents one of the longitudinal modes dominates in the spectra of the ridge lasers they have been successfully applied forgas spectroscopy.

1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room Temperature

1977 ◽  
Vol 16 (7) ◽  
pp. 1273-1274 ◽  
Author(s):  
Kunishige Oe ◽  
Seigo Ando ◽  
Koichi Sugiyama
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Cw Operation

2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers

1999 ◽  
Vol 11 (7) ◽  
pp. 794-796 ◽  
Author(s):  
D.Z. Garbuzov ◽  
H. Lee ◽  
V. Khalfin ◽  
R. Martinelli ◽  
J.C. Connolly ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Cw Operation

Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers

2008 ◽  
Vol 16 (1) ◽  
Author(s):  
P. Karbownik ◽  
R. Sarzała
Keyword(s):  
Active Region ◽  
Diode Laser ◽  
Temperature Increase ◽  
Room Temperature ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Ridge Waveguide ◽  
Lasing Threshold ◽  
Etching Depth ◽  
Region Temperature

AbstractRoom-temperature (RT) continuous-wave (CW) operation of the 405-nm ridge-waveguide (RW) InGaN/GaN quantum-well diode lasers equipped with the n-type GaN substrate and two contacts on both sides of the structure has been investigated with the aid of the comprehensive self-consistent simulation model. As expected, the mounting configuration (p-side up or down) has been found to have a crucial impact on the diode laser performance. For the RT CW threshold operation of the otherwise identical diode laser, the p-side up RW laser exhibits as high as nearly 68°C maximal active-region temperature increase whereas an analogous increase for the p-side down laser was equal to only 24°C. Our simulation reveals that the lowest room-temperature lasing threshold may be expected for relatively narrow and deep ridges. For the structure under consideration, the lowest threshold current density of 5.75 kA/cm2 has been determined for the 2.2-μm ridge width and the 400-nm etching depth. Then, the active-region temperature increase was as low as only 24 K over RT. For wider 5-μm ridge, this increase is twice higher. An impact of etching depth is more essential for narrower ridges. Quite high values (between 120 and 140 K) of the characteristic parameter T0 convince very good thermal properties of the above laser.

Low-divergence single-mode ridge waveguide diode lasers

1991 ◽  
Vol 3 (3) ◽  
pp. 199-201 ◽  
Author(s):  
C.M. Harding ◽  
Y.C. Chen ◽  
R.J. Dalby
Keyword(s):  
Diode Lasers ◽  
Single Mode ◽  
Ridge Waveguide
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