Room-temperature cw operation of GaInAsSb/AlGaAsSb quantum well diode lasers emitting beyond 2 /spl mu/m

2000 ◽  
Author(s):  
C. Mermelstein ◽  
S. Simanowski ◽  
M. Mayer ◽  
R. Kiefer ◽  
J. Schmitz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Diode Lasers ◽  
Cw Operation

1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room Temperature

1977 ◽  
Vol 16 (7) ◽  
pp. 1273-1274 ◽  
Author(s):  
Kunishige Oe ◽  
Seigo Ando ◽  
Koichi Sugiyama
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Cw Operation

Near Room Temperature CW Operation of 660 nm Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 12) ◽  
pp. L911-L913 ◽  
Author(s):  
Hidetoshi Iwamura ◽  
Tadashi Saku ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Cw Operation ◽  
Multi Quantum Well

Low‐threshold room‐temperature cw operation of (AlGaAs)m(GaAs)nsuperlattice quantum well lasers emitting at ∼680 nm

1987 ◽  
Vol 51 (10) ◽  
pp. 707-709 ◽  
Author(s):  
T. Hayakawa ◽  
T. Suyama ◽  
K. Takahashi ◽  
M. Kondo ◽  
S. Yamamoto ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Quantum Well Lasers ◽  
Cw Operation ◽  
Low Threshold

2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers

1999 ◽  
Vol 11 (7) ◽  
pp. 794-796 ◽  
Author(s):  
D.Z. Garbuzov ◽  
H. Lee ◽  
V. Khalfin ◽  
R. Martinelli ◽  
J.C. Connolly ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Cw Operation

2.3–2.7µm InGaAsSb/AlGaAsSb Broad-Contact and Single-Mode Ridge-Waveguide SCH-QW Diode Lasers Operating in CW Regime at Room Temperature

1999 ◽  
Vol 607 ◽  
Author(s):  
D. Garbuzov ◽  
H. Lee
Keyword(s):  
Quantum Well ◽  
Wavelength Range ◽  
Current Density ◽  
Room Temperature ◽  
Diode Lasers ◽  
Single Mode ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Ridge Waveguide ◽  
Longitudinal Modes

AbstractA new approach in the design of (Al)InGaAsSb/GaSb quantum well separate confinement heterostructure (QW-SCH) diode lasers has led to CW room-temperature lasing up to 2.7 gm. To avoid QW material degradation associated with the miscibility gap in the 2.3–2.7 tim wavelength range, we used highly strained, “quasi-ternary” InxGa1−xSbl−yAsy compounds with 0.25<x<0.38 and y<0.07 as the material for QWs. Very low threshold current density (∼300 A/cm2) and high CW output powers (>100 mW) were obtained from broad contact devices operating in the 2.3–2.6 μm wavelength range. From the spontaneous emission measurements we have identified that the Auger process determines the rate of recombination in quantum well active region over the entire temperature range studied (15– 110 'C) for 2.6 gim lasers and only at temperatures higher than 65 'C for 2.3 pim lasers. If Auger recombination dominates, strong temperature dependence of Auger coefficient leads to the rapid increase of threshold current density with temperature (To ∼40 °C). In the range of 15 – 65 °C for 2.3 gim devicesa monomolecular, non-radiative mechanism dominates and To is about 110 °C. In addition, single-mode CW room temperature ridge-waveguide lasers with wavelength of 2.3-2.55 gim have been fabricated for the first time. The lasers display threshold currents around 50 mA with CW output powers of several milliwatts. Since for a certain range of temperatures and currents one of the longitudinal modes dominates in the spectra of the ridge lasers they have been successfully applied forgas spectroscopy.

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