Room‐temperature cw operation of buried‐stripe double‐heterostructure GaInAsP/InP diode lasers

1977 ◽  
Vol 30 (8) ◽  
pp. 429-431 ◽  
Author(s):  
J. J. Hsieh ◽  
C. C. Shen
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Double Heterostructure ◽  
Cw Operation

1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room Temperature

1977 ◽  
Vol 16 (7) ◽  
pp. 1273-1274 ◽  
Author(s):  
Kunishige Oe ◽  
Seigo Ando ◽  
Koichi Sugiyama
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Cw Operation

Room-temperature CW operation of AlGaInP double-heterostructure visible lasers

1985 ◽  
Vol 21 (20) ◽  
pp. 931 ◽  
Author(s):  
K. Kobayashi ◽  
S. Kawata ◽  
A. Gomyo ◽  
I. Hino ◽  
T. Suzuki
Keyword(s):  
Room Temperature ◽  
Double Heterostructure ◽  
Cw Operation ◽  
Visible Lasers

661.7 nm room-temperature CW operation of AlGaInP double-heterostructure lasers with aluminium-containing quaternary active layer

1985 ◽  
Vol 21 (24) ◽  
pp. 1162 ◽  
Author(s):  
K. Kobayashi ◽  
S. Kawata ◽  
A. Gomyo ◽  
I. Hino ◽  
T. Suzuki
Keyword(s):  
Active Layer ◽  
Room Temperature ◽  
Double Heterostructure ◽  
Cw Operation

2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers

1999 ◽  
Vol 11 (7) ◽  
pp. 794-796 ◽  
Author(s):  
D.Z. Garbuzov ◽  
H. Lee ◽  
V. Khalfin ◽  
R. Martinelli ◽  
J.C. Connolly ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Cw Operation
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