Analysis of organic contaminants from silicon wafer and disk surfaces by thermal desorption-GC-MS

1999 ◽  
Author(s):  
Mark J. Camenzind ◽  
Latif Ahmed ◽  
Anurag Kumar
Keyword(s):  
Silicon Wafer ◽  
Thermal Desorption ◽  
Organic Contaminants

Study of Organic Contaminants Analysis using TD-GCMS on Silicon Wafer Surfaces

2019 ◽  
Vol 16 (6) ◽  
pp. 237-248
Author(s):  
Toshikazu Taira ◽  
Yoshimi Shiramizu ◽  
Masaharu Watanabe ◽  
Nobuyuki Kawai
Keyword(s):  
Silicon Wafer ◽  
Organic Contaminants ◽  
Wafer Surfaces

ACID/BASE Interactions with Silicon Carbide Fiber

1989 ◽  
Vol 170 ◽  
Author(s):  
Sheldon P. Wesson ◽  
Ronald E. Allred
Keyword(s):  
Silicon Carbide ◽  
Thermal Treatment ◽  
Thermal Desorption ◽  
Photoelectron Spectroscopy ◽  
Organic Contaminants ◽  
Fiber Surface ◽  
Glow Discharge Plasma ◽  
Silicon Carbide Fiber ◽  
Acid Base ◽  
Surface Energetics

AbstractSilicon carbide fiber surfaces were analyzed by programmed thermal desorption and inverse gas chromatography, using Lewis acids and bases as probe adsorbates to compare the effect of RF glow discharge plasma and thermal treatment on surface energetics. Changes in surface acid/base character were correlated with wetting data, surface titrations, and surface chemical composition deduced from x-ray photoelectron spectroscopy. Thermal treatment did not alter fiber surface energetics significantly. Plasma treatment rendered the surface more acidic and more basic. XPS and thermal desorption analysis indicate that the plasma removed: strongly adsorbed organic contaminants, exposing and activating the underlying glassy surface.

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