High-yield assembly of hinged 3D optical MEMS devices using magnetic actuation

1998 ◽  
Author(s):  
Yong Yi ◽  
Chang Liu
Author(s):  
Justin R. Serrano ◽  
Leslie M. Phinney ◽  
Carlton F. Brooks

Optical MEMS devices are commonly interfaced with lasers for communication, switching, or imaging applications. Dissipation of the absorbed energy in such devices is often limited by dimensional constraints which may lead to overheating and damage of the component. Surface micromachined, optically powered thermal actuators fabricated from two 2.25 μm thick polycrystalline silicon layers were irradiated with 808 nm continuous wave laser light with a 100 μm diameter spot under increasing power levels to assess their resistance to laser-induced damage. Damage occurred immediately after laser irradiation at laser powers above 275 mW and 295 mW for 150 μm diameter circular and 194 μm by 150 μm oval targets, respectively. At laser powers below these thresholds, the exposure time required to damage the actuators increased linearly and steeply as the incident laser power decreased. Increasing the area of the connections between the two polycrystalline silicon layers of the actuator target decreases the extent of the laser damage. Additionally, an optical thermal actuator target with 15 μm × 15 μm posts withstood 326 mW for over 16 minutes without exhibiting damage to the surface.


Author(s):  
S. Samson ◽  
R. Agarwal ◽  
S. Kedia ◽  
Weidong Wang ◽  
S. Onishi ◽  
...  
Keyword(s):  

Author(s):  
Arvind Chandrasekaran ◽  
Muthukumaran Packirisamy ◽  
Ion Stiharu ◽  
Andre Delage

Author(s):  
P. M. Moore ◽  
F. Modica ◽  
G. J. Wiens ◽  
I. Fassi

This paper discusses the applications and development of magnetic actuators for meso-scale mechanisms. Due to their small sizes, meso-scale parts cannot be actuated using techniques typical of macro-scale mechanisms, such as servos or ball screws. Similarly, the techniques used in micro-actuation, such as the use of electrostatic force in MEMS devices, cannot be easily scaled up to the meso-scale. As a result, the use of magnetic forces for actuating meso-scale mechanisms may be capable of filling this void of actuation methods. A case study of a fixturing mechanism meant for meso-scale end-milling was analyzed. This mechanism uses two fixed-fixed beams in order to actively tune the harmonic modes of the machining operation in order to improve the stability of the cutting. It also uses magnetic forces to actuate the fixturing platform in order to provide close-loop feedback of cutting force.


2012 ◽  
Vol 2012 (CICMT) ◽  
pp. 000246-000250
Author(s):  
Jae-Hyuk Park ◽  
Jun Akedo

We demonstrate metal-based lamb-wave resonant optical MEMS scanning devices actuated by aerosol deposition (AD) piezoelectric film and report their temperature properties and durability. Metal-based structure was introduced to reduce the production cost and to improve the optical scanning performance, simultaneously. The optical scanning devices with large mirror size as well as high scanning angle were fabricated. A high optical scanning angle (more than 60 °) and a high resonant frequency (more than 25 kHz) were achieved in ambient air without vacuum packaging. The resonant frequency and the scanning angle do not have any changes during life test of approximately 50,000 hours. In this report, BaTiO3 (BTO) thick film as a lead free piezoelectric material was prepared by AD process for a piezoelectric exaltation source of scanning devices. Piezoelectric d31 of BTO-AD film was approximately −138 pm/V. The performance of optical scanner driven by AD-BTO thick film was comparable with that of BTO bulk material and AD-PZT thick film. From these results, AD-BTO film might be used to practical applications on the MEMS devices.


Author(s):  
Daniel J. Hyman ◽  
Roger Kuroda

XCom Wireless is a small business specializing in RF MEMS-enabled tunable filters and phase shifters for next-generation communications systems. XCom has developed a high-yielding flip-chip assembly and packaging technique for implementing RF MEMS devices into fully-packaged chip-scale hybrid integrated circuitry for radio and microwave frequency applications through 25 GHz. This paper discusses the packaging approach employed, performance and reliability aspects, and lessons learned. The packaging is similar to a hybrid module approach, with discrete RF MEMS component dies flip-chipped into larger packages containing large-area integrated passives. The first level of interconnect is a pure gold flip chip for high yield strength and reliability with small dies. The use of first-level flip-chip and second-level BGAs allows the extremely large bandwidth MEMS devices to maintain high performance characteristics.


Author(s):  
Tony Rogers ◽  
Nick Aitken

Wafer bonding is a widely used step in the manufacture of Microsystems, and serves several purposes: • Structural component of the MEMS device. • First level packaging. • Encapsulation of vacuum or controlled gas. In addition the technology is becoming more widely used in IC fabrication for wafer level packaging (WLP) and 3D integration. It is also widely used for the fabrication of micro fluidic structures and in the manufacture of high efficiency LED’s. Depending on the application, temperature constraints, material compatibility etc. different wafer bonding processes are available, each with their own benefits and drawbacks. This paper describes various wafer bonding processes that are applicable, not only to silicon, but other materials such as glass and quartz that are commonly used in MEMS devices. The process of selecting the most appropriate bonding process for the particular application is presented along with examples of anodic, glass frit, eutectic, direct, adhesive and thermo-compression bonding. The examples include appropriate metrology for bond strength and quality. The paper also addresses the benefits of being able to treat the wafer surfaces in-situ prior to bonding in order to improve yield and bond strength, and also discusses equipment requirements for achieving high yield wafer bonding, along with high precision alignment accuracy, good force and temperature uniformity, high wafer throughput, etc. Some common problems that can affect yield are identified and discussed. These include local temperature variations, that can occur with anodic bonding, and how to eliminate them; how to cope with materials of different thermal expansion coefficient; how best to deal with out-gassing and achieve vacuum encapsulation; and procedures for multi-stacking wafers of differing thicknesses. The presentation includes infra-red and scanning acoustic microscopy images of various bond types, plus some examples of what can go wrong if the correct manufacturing protocol is not maintained.


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