Improved analytic models and efficient parameter extraction for computationally efficient 1D and 2D ion implantation modeling

1998 ◽  
Author(s):  
Ganesh Balamurugan ◽  
Borna J. Obradovic ◽  
Geng Wang ◽  
Yidong Chen ◽  
Al F. Tasch
Keyword(s):  
Ion Implantation ◽  
Parameter Extraction ◽  
Computationally Efficient ◽  
Analytic Models

Computationally Efficient Model for 2D Ion Implantation Simulation

1997 ◽  
Vol 490 ◽  
Author(s):  
Misha Temkin ◽  
Ivan Chakarov
Keyword(s):  
Ion Implantation ◽  
Efficient Method ◽  
Two Dimensional ◽  
Computationally Efficient ◽  
Crystalline Materials ◽  
One Dimensional ◽  
The One

ABSTRACTA computationally efficient method for ion implantation simulation is presented. The method allows two-dimensional ion implantation profiles in arbitrary shaped structures to be calculated and is valid for both amorphous and crystalline materials. It uses an extension of the one-dimensional dual Pearson approximation into the second dimension.

Circuit-Level and Layout-Specific Interconnect Reliability Assessments

2000 ◽  
Vol 612 ◽  
Author(s):  
S.P. Hau-Riege ◽  
C.V. Thompson ◽  
C.S. Hau-Riege ◽  
V.K. Andleigh ◽  
Y. Chery ◽  
...  
Keyword(s):  
Large Fraction ◽  
Analysis Tool ◽  
Computationally Efficient ◽  
Tree Structures ◽  
Prototype Tool ◽  
Interconnect Reliability ◽  
Reliability Assessments ◽  
Computationally Intensive ◽  
Analytic Models ◽  
Simple Tree

AbstractWe have developed a methodology and a prototype tool for making computationally efficient circuit-level assessments of interconnect reliability. A key component of this process has been the development of simple analytic models that relate the reliability of the complex structures in layouts to the simpler straight, junction-free lines of uniform width that are typically used in lifetime tests. We have considered interconnect trees as the fundamental reliability units, where trees can have multiple junctions and limbs, and can also have width variations. We have developed analytic methods for identifying trees which are immune to failure, and have demonstrated that computationally simple techniques lead to the identification of a large fraction of the trees in a circuit as immune to failure (i.e., that they are ‘immortal’). These trees therefore need not be considered in further analyses. Using simulations and analytic treatments we have also developed default models which allow estimation of the reliability of the remaining trees. These models have been tested and validated them through experiments on simple tree structures with junctions and line-width transitions. Our prototype circuit-level reliability analysis tool projects the reliability of circuits based on specific layouts, and provides a rank listing of the reliability of mortal trees. This allows the user to accept the assessment as is, to carry out more accurate but computationally-intensive analyses of the least reliable trees, or to modify the layout or process to address reliability concerns and reanalyze the reliability.

Detailed Analysis and Computationally Efficient Modeling of Ultra-Shallow Dopant Profiles Obtained by Low Energy B, Bf2, and as Ion Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
K. B. Parab ◽  
S.-H. Yang ◽  
S. J. Morris ◽  
S. Tian ◽  
M. Morris ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Integrated Circuit ◽  
Experimental Analysis ◽  
Low Energy ◽  
Future Generations ◽  
Computationally Efficient ◽  
Ultra Shallow Junctions ◽  
Circuit Technology ◽  
Levels Of Integration ◽  
Dopant Profiles

AbstractWith increasing levels of integration, future generations of integrated circuit technology will require extremely shallow dopant profiles. Ion implantation has long been used in semiconductor material processing and will be a vitally important technique for obtaining ultra-shallow dopant profiles. However, implant channeling for low energy ion implantation must be understood and minimized. We report the results of a detailed experimental analysis of 275 ultra-shallow boron, BF2, and arsenic as-implanted profiles, and the development of an accurate and computationally efficient model for ultra-shallow implants.The ultra-shallow dopant profiles have been modeled by using the Dual-Pearson approach, which employs a weighted sum of two Pearson functions to simulate the profiles. The computationally efficient model covers the following range of implant parameters: implant species B, BF2, As; implant energies from 1 keV to 15 keV; any dose; tilt angles from 0° to 10°; all rotation angles (0°-360°). This experimental analysis is important for the development of scaled devices with ultra-shallow junctions, and the computationally efficient model will enable process simulators to predict ultra-shallow as-implanted profiles accurately.

scholarly journals Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design

2021 ◽  
Vol 11 (23) ◽  
pp. 11088
Author(s):  
Djeber Guendouz ◽  
Chhandak Mukherjee ◽  
Marina Deng ◽  
Magali De Matos ◽  
Christophe Caillaud ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Communication Systems ◽  
Systems Design ◽  
Parameter Extraction ◽  
Compact Model ◽  
Data Traffic ◽  
Computationally Efficient ◽  
Continuous Increase ◽  
Communication Circuits ◽  
High Bandwidth

Due to the continuous increase in data traffic, it is becoming imperative to develop communication systems capable of meeting the throughput requirements. Monolithic Opto-Electronic Integrated Circuits (OEICs) are ideal candidates to meet these demands. With that in mind, we propose a compact and computationally efficient model for Uni-Traveling Carrier Photodiodes (UTC-PDs) which are a key component of OEICs because of their high bandwidth and RF output power. The developed compact model is compatible with existing SPICE design software, enabling the design of beyond 5G and terahertz (THz) communication circuits and systems. By introducing detailed physical equations describing, in particular, the dark current, the intrinsic series resistance, and the junction capacitance, the model accurately captures the physical characteristics of the UTC-PD. The model parameter extraction follows a scalable extraction methodology derived from that of the bipolar and CMOS technologies. A detailed description of the de-embedding process is presented. Excellent agreement between the compact model and measurements has been achieved, showing model versatility across various technologies and scalability over several geometries.

Grain Structure Statistics in As-Patterned and Annealed Interconnects

1998 ◽  
Vol 516 ◽  
Author(s):  
W. Fayad ◽  
V. Andleigh ◽  
C. V. Thompson ◽  
H.J. Frost
Keyword(s):  
Distribution Functions ◽  
Grain Structure ◽  
Structure Evolution ◽  
Computationally Efficient ◽  
Grain Structures ◽  
Structure Sensitive ◽  
Failure Statistics ◽  
Analytic Models ◽  
Best Fit

AbstractWe have simulated the development of grain structures in polycrystalline films with lognormally distributed grain sizes, and carried out extensive characterization of grain cluster and bamboo cluster statistics. These statistics were characterized as a function of line-width to initial-grain-size ratios in as-patterned strips, and in strips in which we have simulated post-patterning grain structure evolution resulting from annealing. Among the important findings is that polygranular and bamboo cluster-length distributions for as-patterned lines are best fit by Weibull distribution functions instead of lognormal or exponential functions, as is often assumed. We report analytic formulae describing grain structure statistics that can be used in reliability calculations and simulations. We have carried out structure-sensitive electromigration simulations to show that the predicted failure statistics are essentially the same for grain structures generated using grain growth simulations and grain structures generated using analytic models. Analytic models provide computationally efficient means of determining the lifetime variations associated with grain-structure variations.

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