Negative-tone TSI process for 193-nm lithography

1998 ◽  
Author(s):  
Koichi Kuhara ◽  
Shigeyasu Mori ◽  
Yuko Kaimoto ◽  
Taku Morisawa ◽  
Takeshi Ohfuji ◽  
...  
Keyword(s):  
Negative Tone ◽  
193 Nm

scholarly journals Negative-tone cycloolefin photoresist for 193-nm lithography

2001 ◽  
Author(s):  
ShihChi Fu ◽  
Kuo-Huang Hsieh ◽  
Lon A. Wang
Keyword(s):  
Negative Tone ◽  
193 Nm

Study of bilayer negative-tone silylation process for 193-nm lithography

2000 ◽  
Author(s):  
Hiroyuki Watanabe ◽  
Isao Satou ◽  
Masayuki Endo ◽  
Hiroaki Morimoto
Keyword(s):  
Negative Tone ◽  
193 Nm

Negative tone 193-nm photoresists

2003 ◽  
Author(s):  
Nick Pugliano ◽  
Patrick J. Bolton ◽  
Tony Barbieri ◽  
Matt King ◽  
Michael T. Reilly ◽  
...  
Keyword(s):  
Negative Tone ◽  
193 Nm

Negative-tone 193-nm resists

2000 ◽  
Author(s):  
Sungseo Cho ◽  
Anthony Vander Heyden ◽  
Jeff D. Byers ◽  
C. Grant Willson
Keyword(s):  
Negative Tone ◽  
193 Nm

Process optimization of a negative-tone CVD photoresist for 193-nm lithography applications

1999 ◽  
Author(s):  
Olivier P. Joubert ◽  
D. Fuard ◽  
Cedric Monget ◽  
Patrick Schiavone ◽  
Olivier Toublan ◽  
...  
Keyword(s):  
Process Optimization ◽  
Negative Tone ◽  
193 Nm

Direct writing of ZrO2 and TiO2 nanostructures by ArF lithography

2010 ◽  
Vol 1247 ◽  
Author(s):  
Hassan Ridaoui ◽  
Ali Dirani ◽  
Fernand Wieder ◽  
Olivier Soppera
Keyword(s):  
Partial Hydrolysis ◽  
Material Structure ◽  
Metal Alkoxide ◽  
Direct Writing ◽  
Physico Chemical ◽  
Film Forming ◽  
Wide Range ◽  
Order Of Magnitude ◽  
Negative Tone ◽  
193 Nm

AbstractWe achieved the preparation of nanostructures based on negative tone inorganic resists by DUV lithography (193 nm). This entails the preparation of a complex of a transition metal by reaction between the metal alkoxide and a suitable ligand. The reaction was carried out in a solvent. Then, a partial hydrolysis of the complex allowed forming metal-oxides inorganic chains by condensation with good film-forming and photopatterning properties. This step corresponds to the synthesis of multifunctional oligomers that can be crosslinked by DUV irradiation.We obtained well-defined patterns exhibiting low rugosity with width down to 75 nm. An achromatic interferometer based on an ArF excimer laser was used to write the nanostructures. The sensitivity of the resin at 193 nm is in the order of magnitude of organic photoresists used in the microelectronics industry.The photoinduced processes were studied with care in order to state the physico-chemical phenomena occurring upon DUV-irradiation. FTIR, XPS and XRD were used for characterizing the material structure after irradiation and thermal treatment. Nanostructures were studied by AFM.The main interest of this resist is that after irradiation, the material is mainly inorganic. It can even be totally mineralized through a subsequent pyrolysis procedure. The process is compatible with a wide range of chemicals (ZrO2, TiO2…). Using lithographic route, it is possible to obtain such nanostructures on relatively wide surfaces. With this new process, we are targeting applications in microelectronics, optics, photonics, photocatalysis, photovoltaic…

scholarly journals Development of High-Performance Negative-tone Resists for 193-nm Lithography

2003 ◽  
Vol 16 (4) ◽  
pp. 489-498 ◽  
Author(s):  
Takashi Hattori ◽  
Yoshiyuki Yokoyama ◽  
Kaori Kimura ◽  
Ryoko Yamanaka ◽  
Toshihiko Tanaka ◽  
...  
Keyword(s):  
High Performance ◽  
Negative Tone ◽  
193 Nm

Development of high-performance negative-tone resists for 193-nm lithography

2003 ◽  
Author(s):  
Takashi Hattori ◽  
Yoshiyuki Yokoyama ◽  
Kaori Kimura ◽  
Ryoko Yamanaka ◽  
Toshihiko Tanaka ◽  
...  
Keyword(s):  
High Performance ◽  
Negative Tone ◽  
193 Nm
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