Silicon wafer temperature monitoring using all-fiber laser ultrasonics

1998 ◽  
Author(s):  
Jorge J. Alcoz ◽  
Charles E. Duffer
Keyword(s):  
Fiber Laser ◽  
Silicon Wafer ◽  
Temperature Monitoring ◽  
Laser Ultrasonics ◽  
Wafer Temperature

Single-wavelength fiber laser for localized temperature monitoring

2010 ◽  
Vol 52 (9) ◽  
pp. 1941-1946 ◽  
Author(s):  
Zachary J. Chaboyer ◽  
Jonas Valiunas ◽  
Brian Adams ◽  
Aicheng Chen ◽  
Gautam Das
Keyword(s):  
Fiber Laser ◽  
Temperature Monitoring

scholarly journals Simulation of silicon wafers heating during rapid thermal processing using “UBTO 1801” unit

Doklady BGUIR ◽  
2020 ◽  
Vol 18 (7) ◽  
pp. 79-86
Author(s):  
J. A. Solovjov ◽  
V. A. Pilipenko ◽  
V. P. Yakovlev
Keyword(s):  
Mathematical Model ◽  
Silicon Wafer ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Light Flux ◽  
Silicon Wafers ◽  
Wafer Surface ◽  
Constant Density ◽  
Wafer Temperature

The present work is devoted to determination of the dependence of the heating temperature of the silicon wafer on the lamps power and the heating time during rapid thermal processing using “UBTO 1801” unit by irradiating the wafer backside with an incoherent flow of constant density light. As a result, a mathematical model of silicon wafer temperature variation was developed on the basis of the equation of nonstationary thermal conductivity and known temperature dependencies of the thermophysical properties of silicon and the emissivity of aluminum and silver applied to the planar surface of the silicon wafer. For experimental determination of the numerical parameters of the mathematical model, silicon wafers were heated with light single pulse of constant power to the temperature of one of three phase transitions such as aluminum-silicon eutectic formation, aluminum melting and silver melting. The time of phase transition formation on the wafer surface during rapid thermal processing was fixed by pyrometric method. In accordance with the developed mathematical model, we determined the conversion coefficient of the lamps electric power to the light flux power density with the numerical value of 5.16∙10-3 cm-2 . Increasing the lamps power from 690 to 2740 W leads to an increase in the silicon wafer temperature during rapid thermal processing from 550°to 930°K, respectively. With that, the wafer temperature prediction error in compliance with developed mathematical model makes less than 2.3 %. The work results can be used when developing new procedures of rapid thermal processing for silicon wafers.

Sub-micron texturing of silicon wafer with fiber laser

2011 ◽  
Author(s):  
Hamid Farrokhi ◽  
Wei Zhou ◽  
Hong Yu Zheng ◽  
Zhongli Li
Keyword(s):  
Fiber Laser ◽  
Silicon Wafer

New Reliable Structure for High Temperature Measurement of Silicon Wafers Using a Specially Attached Thermocouple

1983 ◽  
Vol 23 ◽  
Author(s):  
S.A. Cohen ◽  
T.O. Sedgwick ◽  
J.L. Speidell
Keyword(s):  
Material Processing ◽  
High Temperature ◽  
Temperature Measurement ◽  
Silicon Wafer ◽  
Silicon Wafers ◽  
Temperature Measurements ◽  
Wafer Temperature ◽  
High Temperature Measurement ◽  
Short Time ◽  
Repeated Cycling

ABSTRACTAccurate wafer temperature measurement is very important in the area of material processing. In Short Time Annealing, for example, it is necessary to monitor temperature peaks of up to 1200°C which are only a few seconds in duration. This paper describes a structure consisting of a silicon wafer with a specially attached thermocouple. This structure is capable of reliable high temperature measurements of up to 1200°C and is also capable of surviving repeated cycling at that temperature.

scholarly journals Silicon wafer characterisation by laser ultrasonics and neural networks

2010 ◽  
Vol 214 ◽  
pp. 012042
Author(s):  
F Lefèvre ◽  
F Jenot ◽  
M Ouaftouh ◽  
M Duquennoy ◽  
M Ourak
Keyword(s):  
Neural Networks ◽  
Silicon Wafer ◽  
Laser Ultrasonics

Temperature Measurement of Metallized Silicon Wafers by Infrared Transmission Using Single- and Double-Pass Geometries

1994 ◽  
Vol 342 ◽  
Author(s):  
C.W. Cullen ◽  
J.C. Sturm
Keyword(s):  
Temperature Measurement ◽  
Silicon Wafer ◽  
Silicon Wafers ◽  
Infrared Transmission ◽  
Double Pass ◽  
Wafer Temperature ◽  
Single Pass ◽  
Transmission Technique

ABSTRACTThe infrared transmission technique for the measurement of silicon wafer temperature has been extended to metallized wafers. For wafers with partial metal coverage, a single-pass method has been demonstrated from 200°C to 550°C. For wafers with blanket metal coverage, a novel double-pass infrared transmission technique is presented.

Optical measurements of silicon wafer temperature

2007 ◽  
Vol 254 (1) ◽  
pp. 416-419 ◽  
Author(s):  
K. Postava ◽  
M. Aoyama ◽  
J. Mistrik ◽  
T. Yamaguchi ◽  
K. Shio
Keyword(s):  
Silicon Wafer ◽  
Optical Measurements ◽  
Wafer Temperature
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