Comparison of silicon wafer temperature measurements using thin film thermocouples and lightpipe radiation thermometers in a thermometry test bed

2003 ◽  
Author(s):  
K.S. Ball ◽  
G.Y. Tan
Keyword(s):  
Thin Film ◽  
Silicon Wafer ◽  
Temperature Measurements ◽  
Test Bed ◽  
Wafer Temperature ◽  
Thin Film Thermocouples

RTP Calibration Wafer using thin-film Thermocouples

1998 ◽  
Vol 525 ◽  
Author(s):  
K. G. Kreider ◽  
D. P. Dewitt ◽  
B. K. Tsai ◽  
F. J. Lovas ◽  
D. W. Allen
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Semiconductor Device ◽  
Temperature Measurements ◽  
Spectral Radiance ◽  
Measurement Technology ◽  
Test Bed ◽  
Wafer Temperature ◽  
Thin Film Thermocouples ◽  
Wafer Manufacturing

ABSTRACTRapid thermal processing (RTP) is a key technology for the cluster tool, single wafer manufacturing approach that is used to produce integrated circuits at lower cost with reduced line widths and thermal budgets. However, various problems associated with wafer temperature measurements and dynamic temperature uniformity have hindered the widespread use of RTP in semiconductor device manufacturing. The current technology for calibrating the radiometers employs a thermocouple instrumented wafer. We have accomplished improvements in the accuracy of these measurements through the use of thin-film thermocouples and the new Pt/Pd thermocouple system. These new calibration wafers can reduce the uncertainty in wafer temperature measurement technology by (1) reducing the perturbation due to heat transfer at the thermocouple junctions and (2) replacing conventional thermocouples with the superior Pt/Pd system. The thin-film thermocouples were calibrated using proof specimens fabricated with the Si 200 mm wafers and evaluated in the NIST RTP sensor test bed.The commercial type K thermocouples yielded temperature measurements within 4 °C of the thin-film Rh/Pt and Pt/Pd thermocouples on the 200 mm calibration wafer between 725°C and 875 °C. The Pt/Pd thin-film thermocouples proved less durable than the Rh/Pt thin films and the limitations of these systems are discussed. We also present a comparison of the radiometric measurements with the thermocouple measurements using a model estimating the wafer temperature from its spectral radiance temperature.

New Reliable Structure for High Temperature Measurement of Silicon Wafers Using a Specially Attached Thermocouple

1983 ◽  
Vol 23 ◽  
Author(s):  
S.A. Cohen ◽  
T.O. Sedgwick ◽  
J.L. Speidell
Keyword(s):  
Material Processing ◽  
High Temperature ◽  
Temperature Measurement ◽  
Silicon Wafer ◽  
Silicon Wafers ◽  
Temperature Measurements ◽  
Wafer Temperature ◽  
High Temperature Measurement ◽  
Short Time ◽  
Repeated Cycling

ABSTRACTAccurate wafer temperature measurement is very important in the area of material processing. In Short Time Annealing, for example, it is necessary to monitor temperature peaks of up to 1200°C which are only a few seconds in duration. This paper describes a structure consisting of a silicon wafer with a specially attached thermocouple. This structure is capable of reliable high temperature measurements of up to 1200°C and is also capable of surviving repeated cycling at that temperature.

Experimental Investigations of Laser Micromachining of Metal Using Micro Thin Film Thermocouples

2007 ◽  
Author(s):  
Hongseok Choi ◽  
Xiaochun Li
Keyword(s):  
Thin Film ◽  
Surface Temperature ◽  
Laser Energy ◽  
Laser Micromachining ◽  
Temperature Measurements ◽  
Laser Spot ◽  
Experimental Investigations ◽  
Operation Temperature ◽  
Thin Film Thermocouples ◽  
Complex Phenomena

Laser-material interactions involved in laser micromachining are extremely complicated. In order to improve the fundamental understanding of the laser micromachining process, it is essential to investigate the complex phenomena and mechanisms of the physical processes within and close to the region of the interaction. Topographical characterizations of laser micromachining with various laser energy fluences were undertaken to correlate the resulting geometry changes with surface temperature measurements. Single pulses of laser beam with a nominal diameter of 47 μm were used. Possible changes of surface chemical composition induced by the laser micromachining process, in particular oxide formation, were also investigated around the laser spot. Moreover, C-type micro thin film thermocouples (TFTCs) with a junction size of 2 μm × 2 μm were fabricated to increase the maximum operation temperature and spatial resolution of temperature measurements. Surface temperature distribution around the laser spot was obtained in the range from 45 μm to 85 μm away from the center of laser spot. The result showed that there was a steep gradient of temperature in the radial direction and a superheated area around laser spot. It was also observed that the temperature profile matched the oxidation profile due to thermal effects.

Design of Micro-Arrayed Thin Film Thermocouples (TFTC)

2003 ◽  
Author(s):  
Jong-Jin Park ◽  
Minoru Taya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Conduction ◽  
Steady State ◽  
Aluminum Nitride ◽  
Silicon Wafer ◽  
Measured Data ◽  
Bulk Materials ◽  
Thin Aluminum ◽  
Thin Film Thermocouples

We designed the thin film thermocouples (TFTC) made by T-type (Copper-Constantan) thermocouple arrays in order to measure temperature distribution at higher spatial resolutions. This sensor consists of a few different layers; silicon wafer, thin aluminum nitride (AlN) layer, and thin film thermocouple layers. The thickness of the thin aluminum nitride (AlN) layer is 100nm and the layer is located between silicon wafer and thin film thermocouples to construct an electrical insulator and thermal conductor. T-type (Copper-Constantan) thermocouples are deposited on the aluminum nitride (AlN) layer over the silicon wafer and the copper thickness and constantan thickness are 50nm, repectively. The sensor area is 10mm × 10mm, and has 10 × 10 junction arrays, and each junction has 100μm × 100μm surface area. According to the measured data, electrical resistivitives of thin films are almost 5 times greater than those of bulk materials. This is based on the comparison of thermal simulation and measured data of 1-D heat conduction in steady state. Seebeck coefficients between copper bulk material and constantan thin film are calculated and the weight factor is defined due to Seebeck coefficient mismatches of bulk materials and thin films. Thermal simulation of 2-dimensional heat conduction in steady state calculated by finite element analysis and compared with the measured data, resulting in a good agreement between simulations and measured data.

scholarly journals Ceramic thin film thermocouples for SiC-based ceramic matrix composites

2012 ◽  
Vol 520 (17) ◽  
pp. 5801-5806 ◽  
Author(s):  
John D. Wrbanek ◽  
Gustave C. Fralick ◽  
Dongming Zhu
Keyword(s):  
Thin Film ◽  
Ceramic Matrix Composites ◽  
Ceramic Matrix ◽  
Matrix Composites ◽  
Ceramic Thin Film ◽  
Thin Film Thermocouples
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