Effect of optical phonon confinement on Raman spectra of porous silicon

1997 ◽  
Author(s):  
J. Zuk ◽  
Miroslaw Kulik
Keyword(s):  
Porous Silicon ◽  
Raman Spectra ◽  
Optical Phonon ◽  
Phonon Confinement

Phonon confinement effects in Raman spectra of porous silicon at non-resonant excitation condition

2014 ◽  
Vol 45 (6) ◽  
pp. 470-475 ◽  
Author(s):  
Marin Kosović ◽  
Ozren Gamulin ◽  
Maja Balarin ◽  
Mile Ivanda ◽  
Vedran Đerek ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Raman Spectra ◽  
Resonant Excitation ◽  
Excitation Condition ◽  
Phonon Confinement ◽  
Confinement Effects

scholarly journals EFFECT OF PHONON CONFINEMENT AND STRAIN ON RAMAN SPECTRA FROM LIGHT-EMITTING POROUS SILICON

1994 ◽  
Vol 43 (3) ◽  
pp. 494
Author(s):  
YANG MIN ◽  
HUANG DA-MING ◽  
HAO PING-HAI ◽  
ZHANG FU-LONG ◽  
HOU XIAO-YUAN ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Raman Spectra ◽  
Phonon Confinement ◽  
Light Emitting

scholarly journals Depth-Resolved Microspectroscopy of Porous Silicon Multilayers

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Manotas ◽  
F. Agulló-Rueda ◽  
J. D. Moreno ◽  
R. J. Martín-Palma ◽  
R. Guerrero-Lemus ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Phonon Frequency ◽  
Lattice Mismatch ◽  
High Porosity ◽  
Phonon Confinement ◽  
Heating Effects ◽  
Average Size ◽  
Good Agreement

AbstractWe have measured micro-photoluminescence (PL) and micro-Raman spectra on the cross section of porous silicon multilayers to sample different layer depths. We find noticeable differences in the spectra of layers with different porosity, as expected from the quantum confinement of electrons and phonons in silicon nanocrystals with different average sizes. The PL emission band gets stronger, blue shifts, and narrows at the high porosity layers. The average size can be estimated from the shift. The Raman phonon band at 520 cm−1 weakens and broadens asymmetrically towards the low energy side. The line shape can be related quantitatively with the average size by the phonon confinement model. To get a good agreement with the model we add a band at around 480 cm−1, which has been attributed to amorphous silicon. We also have to leave as free parameters the bulk silicon phonon frequency and its line width, which depend on temperature and stress. We reduced laser power to eliminate heating effects. Then we use the change of frequency with depth to monitor the stress. At the interface with the substrate we find a compressive stress in excess of 10 kbar, which agrees with the reported lattice mismatch. Finally, average sizes are larger than those estimated from PL.

Observation of the forbidden doublet optical phonon in Raman spectra of strained Si for stress analysis

2010 ◽  
Vol 97 (4) ◽  
pp. 041915 ◽  
Author(s):  
Vladimir Poborchii ◽  
Tetsuya Tada ◽  
Toshihiko Kanayama
Keyword(s):  
Stress Analysis ◽  
Raman Spectra ◽  
Optical Phonon ◽  
Strained Si

Width of Raman Line from Porous Silicon Independent of Total Charge Consumed During Anodization

2003 ◽  
Vol 02 (01n02) ◽  
pp. 31-35
Author(s):  
Masato Ohmukai ◽  
Masaki Taniguchi ◽  
Yasuo Tsutsumi
Keyword(s):  
Porous Silicon ◽  
Raman Spectra ◽  
Raman Line ◽  
Electric Charge ◽  
Wave Number ◽  
Raman Peak ◽  
Electrochemical Reactions ◽  
Total Charge ◽  
Lower Wave Number

We investigated the Raman spectra as a function of the total electric charge consumed in forming porous silicon. It was found that the Raman peak shifted to the lower wave number side as the total electric charge increased. However, the width of the Raman line was insensitive to the total electric charge. It shows the size of nanocrystallites can be widely ranged regardless of the degree of electrochemical reactions during anodization.

Nondestructive Characterizations of Au-Catalyzed GaAs Nanowires on GaAs(111)B Substrates via Identifications of 1st Order Optical Phonon Modes Using μ-Raman Spectroscopy

2020 ◽  
Vol 20 (7) ◽  
pp. 4358-4363
Author(s):  
Jeung Hun Park ◽  
Richard S. Kim ◽  
Se-Jeong Park ◽  
Gye-Choon Park ◽  
Choong-Heui Chung
Keyword(s):  
Raman Spectroscopy ◽  
Dose Rate ◽  
Raman Spectra ◽  
Optical Phonon ◽  
Longitudinal Optical ◽  
Transverse Optical ◽  
Longitudinal Optical Phonon ◽  
Phonon Modes ◽  
Gaas Nanowires ◽  
Beam Dose

We report the relation between the catalyst patterning conditions and the intensity of the 1st order Raman active modes in Au-catalyzed GaAs nanowire bundles. We fabricated e-beam lithographically Au-patterned GaAs(111)B substrates by varying the patterning conditions (e-beam dose rate, dot-size and interdot-spacings), and grew GaAs nanowires via vapor–liquid–solid process using a solid-source molecular beam epitaxy. To understand the effects of the substrate preparation conditions and resulting morphologies on the optical characteristics of 1st order transverse optical and longitudinal optical phonon modes of GaAs, we characterized the nanowire bundles using complementary μ-Raman spectroscopy and scanning electron microscopy as a function of the e-beam dose rate (145–595 μC/cm2), inter-dot spacing (100 and 150 nm) and pattern size (100 and 150 nm). Ensembles of single crystalline GaAs nanowires covered with different Au-thickness exhibit a downshift and asymmetric broadening of the 1st order transverse optical and longitudinal optical phonon peaks relative to GaAs bulk modes. We also showed that the sensitivity of a downshift and broadening of Raman spectra are directly related to morphological and surface coverage variations in as-grown nanowires. We observed clear increases of the transverse optical and longitudinal optical intensity as well as the relatively higher peak shift and broadening of Raman spectra from the 100 nm patterning in response to the dose rate change. Strong dependence of Raman spectra of the nanowire bundles on the e-beam dose rate changes are attributed to the variations in spatial density, size, shape and random growth orientation of the wires. We have shown that the identification of the changes in GaAs longitudinal optical and Arsenic anti-site peaks is good indicators to characterize the quality of as-grown GaAs nanowires. Our finding confirms the utilization of Raman spectroscopy as a powerful tool for characterizing chemical, structural, and morphological information of as-grown nanowires within the supporting substrate.

Study of the effects on the Raman spectra of adsorption strain in porous silicon

2007 ◽  
Author(s):  
M. A. Ferrara ◽  
M. G. Donato ◽  
L. Sirleto ◽  
G. Messina ◽  
S. Santangelo ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Raman Spectra
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