Study of the effects on the Raman spectra of adsorption strain in porous silicon

2007 ◽  
Author(s):  
M. A. Ferrara ◽  
M. G. Donato ◽  
L. Sirleto ◽  
G. Messina ◽  
S. Santangelo ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Raman Spectra

Width of Raman Line from Porous Silicon Independent of Total Charge Consumed During Anodization

2003 ◽  
Vol 02 (01n02) ◽  
pp. 31-35
Author(s):  
Masato Ohmukai ◽  
Masaki Taniguchi ◽  
Yasuo Tsutsumi
Keyword(s):  
Porous Silicon ◽  
Raman Spectra ◽  
Raman Line ◽  
Electric Charge ◽  
Wave Number ◽  
Raman Peak ◽  
Electrochemical Reactions ◽  
Total Charge ◽  
Lower Wave Number

We investigated the Raman spectra as a function of the total electric charge consumed in forming porous silicon. It was found that the Raman peak shifted to the lower wave number side as the total electric charge increased. However, the width of the Raman line was insensitive to the total electric charge. It shows the size of nanocrystallites can be widely ranged regardless of the degree of electrochemical reactions during anodization.

Peculiarities of Raman spectra from porous silicon

2002 ◽  
Author(s):  
N.E. Korsunskaya ◽  
M.K. Sheinkman ◽  
M.Ya. Valakh ◽  
T.V. Torchinskaya ◽  
L.Yu. Khomenkova ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Raman Spectra

Phonon confinement effects in Raman spectra of porous silicon at non-resonant excitation condition

2014 ◽  
Vol 45 (6) ◽  
pp. 470-475 ◽  
Author(s):  
Marin Kosović ◽  
Ozren Gamulin ◽  
Maja Balarin ◽  
Mile Ivanda ◽  
Vedran Đerek ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Raman Spectra ◽  
Resonant Excitation ◽  
Excitation Condition ◽  
Phonon Confinement ◽  
Confinement Effects

STRUCTURAL AND OPTICAL FEATURES OF POROUS SILICON PREPARED BY ELECTROCHEMICAL ANODIC ETCHING

2009 ◽  
Vol 16 (01) ◽  
pp. 93-97 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
F. K. YAM ◽  
H. ABU HASSAN
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Porous Silicon ◽  
Raman Scattering ◽  
Raman Spectra ◽  
Raman Peak ◽  
Sem Images ◽  
Anodic Etching ◽  
Etching Duration ◽  
Scanning Electron

Porous silicon (PS) samples were prepared by electrochemical anodic etching of n-type (111) silicon wafers in HF solution. The structural, optical, and chemical features of the PS were investigated in terms of different etching durations. The porous samples were investigated by scanning electron microscopy (SEM), photoluminescence (PL), and Raman scattering. SEM images indicated that the pores increased with the etching duration; however, the etching duration has significant effect on the shape of the pores. PL measurements revealed that the porosity-induced PL intensity enhancement was only observed in the porous samples. Raman spectra showed shifting of PS Raman peak to lower frequency relative to non-porous silicon Raman peak.

scholarly journals EFFECT OF PHONON CONFINEMENT AND STRAIN ON RAMAN SPECTRA FROM LIGHT-EMITTING POROUS SILICON

1994 ◽  
Vol 43 (3) ◽  
pp. 494
Author(s):  
YANG MIN ◽  
HUANG DA-MING ◽  
HAO PING-HAI ◽  
ZHANG FU-LONG ◽  
HOU XIAO-YUAN ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Raman Spectra ◽  
Phonon Confinement ◽  
Light Emitting

The interrelation of surface relief of porous silicon with specific features of Raman spectra

2002 ◽  
Vol 36 (5) ◽  
pp. 558-563 ◽  
Author(s):  
B. M. Bulakh ◽  
B. R. Jumayev ◽  
N. O. Korsunska ◽  
O. S. Litvin ◽  
T. V. Torchynska ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Raman Spectra ◽  
Surface Relief

scholarly journals Анализ структуры наночастиц, формируемых методом лазерной абляции пористого кремния и микрочастиц кремния в воде

2019 ◽  
Vol 45 (21) ◽  
pp. 22
Author(s):  
С.В. Заботнов ◽  
А.В. Колчин ◽  
Ф.В. Кашаев ◽  
А.В. Скобёлкина ◽  
В.Ю. Нестеров ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Porous Silicon ◽  
Raman Spectra ◽  
Amorphous Phase ◽  
Silicon Nanoparticles ◽  
Picosecond Laser ◽  
Mesoporous Silicon ◽  
Spectra Analysis ◽  
Ablation Technique ◽  
Laser Ablation Technique

Silicon nanoparticles with the size from 50 nm to 300 nm depending on used targets were formed by the picosecond laser ablation technique of porous silicon and silicon microparticles in water. Raman spectra analysis of the produced nanoparticles revealed a slight presence of the amorphous phase (10 – 12%) in them for the case of ablation of micro- and mesoporous silicon layers and almost complete crystallinity as a result of laser fragmentation of the silicon micropowders in water. The results can be helpful for further use of the considered nanoparticles in applications of photonics and biomedicine.

The Effects of Chemical Etching of Porous Silicon on Raman Spectra

2004 ◽  
Vol 54 (7) ◽  
pp. 781-784 ◽  
Author(s):  
Masato Ohmukai ◽  
Nobutomo Uehara ◽  
Tetsuya Ymasaki ◽  
Yasuo Tsutsumi
Keyword(s):  
Porous Silicon ◽  
Raman Spectra ◽  
Chemical Etching

scholarly journals Особенности дефектообразования в наноструктурированном кремнии при ионном облучении

2019 ◽  
Vol 53 (6) ◽  
pp. 810
Author(s):  
А.В. Кожемяко ◽  
А.П. Евсеев ◽  
Ю.В. Балакшин ◽  
А.А. Шемухин
Keyword(s):  
Porous Silicon ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Raman Spectra ◽  
Crystalline Phase ◽  
Weak Signal ◽  
Silicon Phase ◽  
Nanostructured Silicon ◽  
Displacement Per Atom ◽  
Accumulation Of Defects

Irradiations of the nanostructured silicon with Si+ and He+ ions were carried out with energies of 200 and 150 keV, respectively. Raman scattering showed destruction of the structure after irradiations and accumulation of defects at different fluences of irradiation. It is shown that monocrystalline silicon films are amorphized under irradiation at 0.7 displacement per atom. However, porous silicon does not completely amorphize at 0.5 displacement per atom, a weak signal is observed in the Raman spectra corresponding to the amorphous silicon phase, and at the same time there is an obvious signal from the crystalline phase of silicon. The size of nanocrystallites in the structure of porous silicon was estimated at different fluences of irradiation.

scholarly journals Temperature measurement from the Raman spectra of porous silicon

2005 ◽  
Vol 54 (10) ◽  
pp. 4654
Author(s):  
Bai Ying ◽  
Lan Yan-Na ◽  
Mo Yu-Jun
Keyword(s):  
Porous Silicon ◽  
Temperature Measurement ◽  
Raman Spectra
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