lower wave number
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2019 ◽  
Vol 7 (2) ◽  
pp. 102-104
Author(s):  
Mukesh Upadhyay ◽  
Ashok Kumar Thakur ◽  
Mohan Daimary

In my present paper, Tin sulfide nanoparticles were successfully synthesized using wet chemical process and studied their structural properties. The prepared nanoparticles were characterized by X-Ray diffraction (XRD) and Raman spectroscopy. The XRD confirms the Tin Sulfide nanoparticles possessing orthorhombic structure having particle size is approx. 12.72 nm. The Raman spectrum shows the frequency of the phonon in these nanoparticles and the Raman modes of Tin Sulfide nanoparticles were found to shifts towards lower wave number side.


2011 ◽  
Vol 699 ◽  
pp. 273-279
Author(s):  
A. Xavier ◽  
R Sathya ◽  
D. Usha ◽  
P.S. Harikrishnan

A series of metal complexes have been synthesized by the reaction of Schiff base with metal (II) salt solution. The complexes were characterized by UV and FT- IR studies. The study reveals that the geometry of the complexes were octahedral. The electronic spectra of these complexes show a strong absorption band in 550 – 580 nm region. This confirms the coordination of ligand with metal. The FT-IR shows a very strong band at 1606cm-1 assigned to C=N stretching vibration. It is shifted to lower wave number because of the complex formation, suggesting that coordination of the Schiff base groups through N- atoms with the metal ion. The band at 3056cm-1 is due to aromatic O-H stretching, the sharp peak at 750 cm-1 and 688 cm-1 are due to halogens substituted in the para position.


2007 ◽  
Vol 121-123 ◽  
pp. 331-336 ◽  
Author(s):  
Ming Liu ◽  
K.L. Jiang ◽  
Q.Q. Li ◽  
H.T. Yang ◽  
S.S. Fan

Laser irradiated carbon nanotubes in vacuum can emit dazzling yellow light due to the laser heating effect. We investigated the phonon frequency shifts of as irradiated carbon nanotube bundles by Raman spectroscopy under ultraviolet laser illumination (325 nm, 2.4 mW), the G band peak position was found to shift 50 cm-1 to lower wave number. By considering the temperature coefficient of the G band shift, the local temperature of the illuminated spot was predicted to be nearly 2000K. This temperature had a linear relationship with the incident laser power, and also was greatly influenced by the pressure of the vacuum chamber. The photoluminescence of the CNT bundle was also studied, which exhibits an oscillation of 0.1 eV, a possible origin of the oscillation was discussed.


2003 ◽  
Vol 02 (01n02) ◽  
pp. 31-35
Author(s):  
Masato Ohmukai ◽  
Masaki Taniguchi ◽  
Yasuo Tsutsumi

We investigated the Raman spectra as a function of the total electric charge consumed in forming porous silicon. It was found that the Raman peak shifted to the lower wave number side as the total electric charge increased. However, the width of the Raman line was insensitive to the total electric charge. It shows the size of nanocrystallites can be widely ranged regardless of the degree of electrochemical reactions during anodization.


2000 ◽  
Vol 640 ◽  
Author(s):  
Tamotsu Jikimoto ◽  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Kunikazu Izumi

ABSTRACTThe structure of thermal oxide film thinner than 2nm on a SiC surface was investigated using in-situ infrared reflection absorption spectroscopy (IRAS). In the case of oxide films on 6H-SiC(0001), the peak frequencies of the TO mode (≈1050 cm−1) of the Si-O-Si stretch vibration shifts toward lower wave number with decreasing oxide thickness in the range of 0.2nm to 2nm and shift toward a higher frequency as the growth temperature rises. The LO mode (≈1250 cm−1) of the Si-O-Si stretch vibration remains almost constant with the increase in oxide thickness from 0.2 nm to 2 nm. These results indicate that there is a considerable difference in the structure near the interface between a thermally grown oxide layer formed on SiC and one formed on Si.


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