Phonon confinement effects in Raman spectra of porous silicon at non-resonant excitation condition

2014 ◽  
Vol 45 (6) ◽  
pp. 470-475 ◽  
Author(s):  
Marin Kosović ◽  
Ozren Gamulin ◽  
Maja Balarin ◽  
Mile Ivanda ◽  
Vedran Đerek ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Raman Spectra ◽  
Resonant Excitation ◽  
Excitation Condition ◽  
Phonon Confinement ◽  
Confinement Effects

scholarly journals EFFECT OF PHONON CONFINEMENT AND STRAIN ON RAMAN SPECTRA FROM LIGHT-EMITTING POROUS SILICON

1994 ◽  
Vol 43 (3) ◽  
pp. 494
Author(s):  
YANG MIN ◽  
HUANG DA-MING ◽  
HAO PING-HAI ◽  
ZHANG FU-LONG ◽  
HOU XIAO-YUAN ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Raman Spectra ◽  
Phonon Confinement ◽  
Light Emitting

scholarly journals Depth-Resolved Microspectroscopy of Porous Silicon Multilayers

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Manotas ◽  
F. Agulló-Rueda ◽  
J. D. Moreno ◽  
R. J. Martín-Palma ◽  
R. Guerrero-Lemus ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Phonon Frequency ◽  
Lattice Mismatch ◽  
High Porosity ◽  
Phonon Confinement ◽  
Heating Effects ◽  
Average Size ◽  
Good Agreement

AbstractWe have measured micro-photoluminescence (PL) and micro-Raman spectra on the cross section of porous silicon multilayers to sample different layer depths. We find noticeable differences in the spectra of layers with different porosity, as expected from the quantum confinement of electrons and phonons in silicon nanocrystals with different average sizes. The PL emission band gets stronger, blue shifts, and narrows at the high porosity layers. The average size can be estimated from the shift. The Raman phonon band at 520 cm−1 weakens and broadens asymmetrically towards the low energy side. The line shape can be related quantitatively with the average size by the phonon confinement model. To get a good agreement with the model we add a band at around 480 cm−1, which has been attributed to amorphous silicon. We also have to leave as free parameters the bulk silicon phonon frequency and its line width, which depend on temperature and stress. We reduced laser power to eliminate heating effects. Then we use the change of frequency with depth to monitor the stress. At the interface with the substrate we find a compressive stress in excess of 10 kbar, which agrees with the reported lattice mismatch. Finally, average sizes are larger than those estimated from PL.

Phonon confinement effects in ultrathin epitaxial bismuth films on silicon studied by time-resolved electron diffraction

2009 ◽  
Vol 80 (2) ◽  
Author(s):  
B. Krenzer ◽  
A. Hanisch-Blicharski ◽  
P. Schneider ◽  
Th. Payer ◽  
S. Möllenbeck ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Phonon Confinement ◽  
Confinement Effects ◽  
Time Resolved ◽  
Bismuth Films

Phonon confinement effects in the Raman spectrum of nanodiamond

2009 ◽  
Vol 80 (7) ◽  
Author(s):  
S. Osswald ◽  
V. N. Mochalin ◽  
M. Havel ◽  
G. Yushin ◽  
Y. Gogotsi
Keyword(s):  
Raman Spectrum ◽  
Phonon Confinement ◽  
Confinement Effects

Raman spectrum of Si nanowires: temperature and phonon confinement effects

2013 ◽  
Vol 114 (4) ◽  
pp. 1321-1331 ◽  
Author(s):  
J. Anaya ◽  
A. Torres ◽  
V. Hortelano ◽  
J. Jiménez ◽  
A. C. Prieto ◽  
...  
Keyword(s):  
Raman Spectrum ◽  
Si Nanowires ◽  
Phonon Confinement ◽  
Confinement Effects

Width of Raman Line from Porous Silicon Independent of Total Charge Consumed During Anodization

2003 ◽  
Vol 02 (01n02) ◽  
pp. 31-35
Author(s):  
Masato Ohmukai ◽  
Masaki Taniguchi ◽  
Yasuo Tsutsumi
Keyword(s):  
Porous Silicon ◽  
Raman Spectra ◽  
Raman Line ◽  
Electric Charge ◽  
Wave Number ◽  
Raman Peak ◽  
Electrochemical Reactions ◽  
Total Charge ◽  
Lower Wave Number

We investigated the Raman spectra as a function of the total electric charge consumed in forming porous silicon. It was found that the Raman peak shifted to the lower wave number side as the total electric charge increased. However, the width of the Raman line was insensitive to the total electric charge. It shows the size of nanocrystallites can be widely ranged regardless of the degree of electrochemical reactions during anodization.

Size and phonon-confinement effects on low-frequency Raman mode of anatase TiO2 nanocrystal

2005 ◽  
Vol 340 (1-4) ◽  
pp. 220-227 ◽  
Author(s):  
Ke-Rong Zhu ◽  
Ming-Sheng Zhang ◽  
Qiang Chen ◽  
Zhen Yin
Keyword(s):  
Low Frequency ◽  
Anatase Tio2 ◽  
Raman Mode ◽  
Phonon Confinement ◽  
Confinement Effects
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