Large-area edge-buttable CCDs for mosaic focal plane applications

1997 ◽  
Author(s):  
Thomas W. Woody ◽  
Morley M. Blouke ◽  
Alice L. Reinheimer ◽  
Taner Dosluoglu ◽  
William Burmester ◽  
...  
Keyword(s):  
Focal Plane ◽  
Large Area

The Parkes 21 cm Multibeam Receiver

1996 ◽  
Vol 13 (3) ◽  
pp. 243-248 ◽  
Author(s):  
L. Staveley-Smith ◽  
W. E. Wilson ◽  
T. S. Bird ◽  
M. J. Disney ◽  
R. D. Ekers ◽  
...  
Keyword(s):  
Data Acquisition ◽  
Focal Plane ◽  
Surface Brightness ◽  
Focal Plane Array ◽  
Optical Surface ◽  
Velocity Range ◽  
Large Area ◽  
Optical Extinction ◽  
Technical Aspects ◽  
Nearby Galaxies

Several extragalactic HI surveys using a λ21 cm 13-beam focal plane array will begin in early 1997 using the Parkes 64 m telescope. These surveys are designed to detect efficiently nearby galaxies that have failed to be identified optically because of low optical surface brightness or high optical extinction. We discuss scientific and technical aspects of the multibeam receiver, including astronomical objectives, feed, receiver and correlator design and data acquisition. A comparison with other telescopes shows that the Parkes multibeam receiver has significant speed advantages for any large-area λ21 cm galaxy survey in the velocity range range 0–14000 km s−1.

Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays

2006 ◽  
Vol 35 (6) ◽  
pp. 1275-1282 ◽  
Author(s):  
C. D. Maxey ◽  
J. C. Fitzmaurice ◽  
H. W. Lau ◽  
L. G. Hipwood ◽  
C. S. Shaw ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Current Status ◽  
Large Area ◽  
Infrared Focal Plane Arrays ◽  
Movpe Growth

Recent advances in heteroepitaxial Ge/Si(100) and Ge/Si(l 11)

1994 ◽  
Vol 52 ◽  
pp. 838-839
Author(s):  
J. B. Posthill ◽  
D. P. Malta ◽  
R. Pickett ◽  
M. L. Timmons ◽  
T. P. Humphreys ◽  
...  
Keyword(s):  
Focal Plane ◽  
High Mobility ◽  
Epitaxial Films ◽  
Focal Plane Arrays ◽  
Si Substrate ◽  
Large Area ◽  
Lattice Match ◽  
Temperature Growth ◽  
X Ray ◽  
Indium Bump

Heteroepitaxial Ge-on-Si could have many applications which include: high mobility p-channel fieldeffect transistors (FETs), large area Ge-based IR or X-ray detectors, or as a substrate for the growth of other epitaxial semiconductors. In particular, the close lattice match between Ge and GaAs and Ge and ZnSe offers a potential for Ge to be used as an interlayer for a GaAs/Si or ZnSe/Si technology.Additionally, with the Si substrate as the "foundation" for further epitaxial semiconductors, thereisa built-in thermal match for any device that must be intimately bonded to Si-based circuitry. Thisis particularly critical in the case of HgCdTe IR focal plane arrays that are indium bump-bonded to aSi multiplexer which will experience thermal cycling in use. This contribution briefly reviews some ofour recent results in the high temperature growth of Ge epitaxial films on Si(100) and Si(l 11) substrates which are being developed for use as a template for HgCdTe/CdZnTe growth.

MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress

1999 ◽  
Vol 28 (6) ◽  
pp. 705-711 ◽  
Author(s):  
T. J. de Lyon ◽  
J. E. Jensen ◽  
M. D. Gorwitz ◽  
C. A. Cockrum ◽  
S. M. Johnson ◽  
...  
Keyword(s):  
Focal Plane ◽  
Recent Progress ◽  
Focal Plane Arrays ◽  
Silicon Substrates ◽  
Large Area ◽  
Infrared Focal Plane Arrays ◽  
Mbe Growth

Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays

1995 ◽  
Vol 24 (5) ◽  
pp. 467-473 ◽  
Author(s):  
S. M. Johnson ◽  
T. J. de Lyon ◽  
C. A. Cockrum ◽  
W. J. Hamilton ◽  
T. Tung ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Large Area ◽  
Infrared Focal Plane Arrays ◽  
Si Substrates ◽  
Direct Growth

Photoconductive (PC) and Photovoltaic (PV) Dual-Mode Operation III-V Quantum well Infrared Photodetectors for 2–14 μm IR Detection

1994 ◽  
Vol 299 ◽  
Author(s):  
Sheng S. Li ◽  
Y. H. Wang ◽  
M. Y. Chuang ◽  
P. Ho
Keyword(s):  
Quantum Well ◽  
Focal Plane ◽  
Image Sensor ◽  
Infrared Photodetectors ◽  
Large Area ◽  
Dual Mode ◽  
Sensor Applications ◽  
Quantum Well Infrared Photodetectors ◽  
Material Systems ◽  
Ir Detection

AbstractWe present four new types of III-V quantum well infrared photodetectors (QWIPs) operating in photoconductive (PC) and photovoltaic (PV) modes for the wavelength range from 2 to 14 μm. These dual-mode (DM) operation QWIPs were grown by the MBE technique using GaAs/AlGaAs, AlAs/AlGaAs, and InGaAs/InAlAs material systems. Based on the bound-to-miniband (BTM) and the enhanced bound-to-continuum (BTC) intersubband transition schemes, these detectors provide the features of large absorption coefficient, low dark current, and high detectivity in the wavelength of interest, and show promising for use in large area IR focal plane array image sensor applications.

CdZnTe on Si(001) and Si(112): Direct MBE Growth for Large‐Area HgCdTe Infrared Focal‐Plane Array Applications

1994 ◽  
Vol 141 (10) ◽  
pp. 2888-2893 ◽  
Author(s):  
T. J. de Lyon ◽  
S. M. Johnson ◽  
C. A. Cockrum ◽  
O. K. Wu ◽  
W. J. Hamilton ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Array ◽  
Large Area ◽  
Infrared Focal Plane Array ◽  
Mbe Growth
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