Large Area Focal Plane Comprising Charge-Coupled Devices And Fiber Optics

1987 ◽  
Vol 26 (9) ◽  
Author(s):  
David C. Harrison ◽  
Barry E. Burke
1997 ◽  
Author(s):  
Thomas W. Woody ◽  
Morley M. Blouke ◽  
Alice L. Reinheimer ◽  
Taner Dosluoglu ◽  
William Burmester ◽  
...  
Keyword(s):  

1996 ◽  
Vol 13 (3) ◽  
pp. 243-248 ◽  
Author(s):  
L. Staveley-Smith ◽  
W. E. Wilson ◽  
T. S. Bird ◽  
M. J. Disney ◽  
R. D. Ekers ◽  
...  

Several extragalactic HI surveys using a λ21 cm 13-beam focal plane array will begin in early 1997 using the Parkes 64 m telescope. These surveys are designed to detect efficiently nearby galaxies that have failed to be identified optically because of low optical surface brightness or high optical extinction. We discuss scientific and technical aspects of the multibeam receiver, including astronomical objectives, feed, receiver and correlator design and data acquisition. A comparison with other telescopes shows that the Parkes multibeam receiver has significant speed advantages for any large-area λ21 cm galaxy survey in the velocity range range 0–14000 km s−1.


2006 ◽  
Vol 35 (6) ◽  
pp. 1275-1282 ◽  
Author(s):  
C. D. Maxey ◽  
J. C. Fitzmaurice ◽  
H. W. Lau ◽  
L. G. Hipwood ◽  
C. S. Shaw ◽  
...  

1988 ◽  
Vol 5 (10) ◽  
pp. 405-416
Author(s):  
R K Bhan ◽  
K C Chhabra ◽  
S K Lomash ◽  
P K Basu

Author(s):  
J. B. Posthill ◽  
D. P. Malta ◽  
R. Pickett ◽  
M. L. Timmons ◽  
T. P. Humphreys ◽  
...  

Heteroepitaxial Ge-on-Si could have many applications which include: high mobility p-channel fieldeffect transistors (FETs), large area Ge-based IR or X-ray detectors, or as a substrate for the growth of other epitaxial semiconductors. In particular, the close lattice match between Ge and GaAs and Ge and ZnSe offers a potential for Ge to be used as an interlayer for a GaAs/Si or ZnSe/Si technology.Additionally, with the Si substrate as the "foundation" for further epitaxial semiconductors, thereisa built-in thermal match for any device that must be intimately bonded to Si-based circuitry. Thisis particularly critical in the case of HgCdTe IR focal plane arrays that are indium bump-bonded to aSi multiplexer which will experience thermal cycling in use. This contribution briefly reviews some ofour recent results in the high temperature growth of Ge epitaxial films on Si(100) and Si(l 11) substrates which are being developed for use as a template for HgCdTe/CdZnTe growth.


1999 ◽  
Vol 28 (6) ◽  
pp. 705-711 ◽  
Author(s):  
T. J. de Lyon ◽  
J. E. Jensen ◽  
M. D. Gorwitz ◽  
C. A. Cockrum ◽  
S. M. Johnson ◽  
...  

1995 ◽  
Vol 24 (5) ◽  
pp. 467-473 ◽  
Author(s):  
S. M. Johnson ◽  
T. J. de Lyon ◽  
C. A. Cockrum ◽  
W. J. Hamilton ◽  
T. Tung ◽  
...  

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