Low-temperature activation method of poly-Si films using rapid thermal annealing

1997 ◽  
Author(s):  
Kiichi Hirano ◽  
Naoya Sotani ◽  
Isao Hasegawa ◽  
Tomoyuki Nohda ◽  
Hisashi Abe ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Activation Method ◽  
Temperature Activation ◽  
Si Films

High Quality Poly-Si Film and Transistor Formed by Nickel-Induced- Lateral-Crystallization and Pulsed-Rapid-Thermal-Annealing

2001 ◽  
Vol 685 ◽  
Author(s):  
T.C. Leung ◽  
C.F. Cheng ◽  
M.C. Poon
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Performance ◽  
Low Cost ◽  
Drain Current ◽  
Large Area ◽  
High Quality ◽  
Lateral Crystallization ◽  
Si Films

AbstractNickel Induced Lateral Crystallization (NILC) and Pulsed Rapid Thermal Annealing (PRTA) have been used to study new low temperature and high quality poly-silicon (poly-Si) films and thin film transistors (TFTs). The growth rate of poly-Si films has been found to greatly increase from 0.025μm/minute to 1.07μm/minute, and the drain current and performance of TFTs have increased by around 75%. The new poly-Si technology has good potential to apply in high performance, large area, fast throughput, low cost and even low temperature device applications.

Crystallized Si films by low‐temperature rapid thermal annealing of amorphous silicon

1989 ◽  
Vol 65 (5) ◽  
pp. 2069-2072 ◽  
Author(s):  
R. Kakkad ◽  
J. Smith ◽  
W. S. Lau ◽  
S. J. Fonash ◽  
R. Kerns
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing ◽  
Si Films

Low‐Temperature Activation and Recrystallization of B+‐ and  BF 2  +  ‐ Implanted LPCVD Amorphous‐Si Films

1995 ◽  
Vol 142 (10) ◽  
pp. 3574-3578 ◽  
Author(s):  
Huang‐Chung Cheng ◽  
Fang‐Shing Wang ◽  
Yeong‐Fang Huang ◽  
Chun‐Yao Huang ◽  
Meng‐Jin Tsai
Keyword(s):  
Low Temperature ◽  
Amorphous Si ◽  
Temperature Activation ◽  
Si Films

Substrates Dependent Low Temperature Fabrication of Silver Nanoparticles Using Rapid Thermal Annealing for Light Trapping Application

2018 ◽  
Vol 18 (11) ◽  
pp. 7739-7748 ◽  
Author(s):  
Bidyut Barman ◽  
Hrishikesh Dhasmana ◽  
Abhishek Verma ◽  
Amit Kumar ◽  
D. N Singh ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Light Trapping

scholarly journals Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

2002 ◽  
Vol 92 (1) ◽  
pp. 214-217 ◽  
Author(s):  
H. B. Zhao ◽  
K. L. Pey ◽  
W. K. Choi ◽  
S. Chattopadhyay ◽  
E. A. Fitzgerald ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Interfacial Reactions

Characterizations of Ultra-thin Dielectrics Grown by Microwave Afterglow O2/N2O Plasma Oxidation at Low Temperature with Rapid Thermal Annealing

1995 ◽  
Vol 387 ◽  
Author(s):  
Po-ching Chen ◽  
Klaus Yung-jane Hsu ◽  
Joseph J. Loferski ◽  
Huey-liang Hwang
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Plasma Oxidation ◽  
X Ray ◽  
Thin Dielectrics

AbstractMicrowave afterglow plasma oxidation at a low temperature (600 °C ) and rapid thermal annealing (RTA) were combined to grow high quality ultra-thin dielectrics. This new approach has a low thermal budget. The mid-gap interface state density of oxides pretreated in N2O plasma was decreased to about 5×1010 cm−2eV−1 after rapid thermal annealing at 950 °C.It was found that RTA is very effective for relieving the oxide stress and reducing the interface state density. Nitrogen incorporated in oxides by the N2O plasma pretreatment of the Si surface helped to reduce the interface state density. Microstructures of ultra-thin oxide grown by microwave afterglow oxidation with or without RTA were revealed by extended-X-ray-absorption-finestructure (EXAFS) and X-ray photoelectron spectroscopy (XPS) analysis.

Influence of the Rapid Thermal Annealing on the Properties of Thin a-Si Films

2004 ◽  
Vol 455-456 ◽  
pp. 108-111
Author(s):  
N. Nedev ◽  
G. Beshkov ◽  
Elvira Fortunato ◽  
S.S. Georgiev ◽  
T. Ivanov ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Si Films
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