Crystallized Si films by low‐temperature rapid thermal annealing of amorphous silicon

1989 ◽  
Vol 65 (5) ◽  
pp. 2069-2072 ◽  
Author(s):  
R. Kakkad ◽  
J. Smith ◽  
W. S. Lau ◽  
S. J. Fonash ◽  
R. Kerns
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing ◽  
Si Films

Low-temperature activation method of poly-Si films using rapid thermal annealing

1997 ◽  
Author(s):  
Kiichi Hirano ◽  
Naoya Sotani ◽  
Isao Hasegawa ◽  
Tomoyuki Nohda ◽  
Hisashi Abe ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Activation Method ◽  
Temperature Activation ◽  
Si Films

Rapid thermal annealing of hydrogenated amorphous silicon grown at low temperature

1987 ◽  
Vol 62 (4) ◽  
pp. 1425-1428 ◽  
Author(s):  
P. Fiorini ◽  
I. Haller ◽  
J. J. Nocera ◽  
S. A. Cohen ◽  
M. H. Brodsky
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Poly-Si films with long carrier lifetime prepared by rapid thermal annealing of Cat-CVD amorphous silicon thin films

2008 ◽  
Vol 516 (5) ◽  
pp. 600-603 ◽  
Author(s):  
Keisuke Ohdaira ◽  
Yuki Abe ◽  
Makoto Fukuda ◽  
Shogo Nishizaki ◽  
Noritaka Usami ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Lifetime ◽  
Silicon Thin Films ◽  
Si Films

scholarly journals Fabrication of highly L10-ordered FePt thin films by low-temperature rapid thermal annealing

APL Materials ◽  
2013 ◽  
Vol 1 (3) ◽  
pp. 032117 ◽  
Author(s):  
M. Mizuguchi ◽  
T. Sakurada ◽  
T. Y. Tashiro ◽  
K. Sato ◽  
T. J. Konno ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing ◽  
Fept Thin Films

High Quality Poly-Si Film and Transistor Formed by Nickel-Induced- Lateral-Crystallization and Pulsed-Rapid-Thermal-Annealing

2001 ◽  
Vol 685 ◽  
Author(s):  
T.C. Leung ◽  
C.F. Cheng ◽  
M.C. Poon
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Performance ◽  
Low Cost ◽  
Drain Current ◽  
Large Area ◽  
High Quality ◽  
Lateral Crystallization ◽  
Si Films

AbstractNickel Induced Lateral Crystallization (NILC) and Pulsed Rapid Thermal Annealing (PRTA) have been used to study new low temperature and high quality poly-silicon (poly-Si) films and thin film transistors (TFTs). The growth rate of poly-Si films has been found to greatly increase from 0.025μm/minute to 1.07μm/minute, and the drain current and performance of TFTs have increased by around 75%. The new poly-Si technology has good potential to apply in high performance, large area, fast throughput, low cost and even low temperature device applications.

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