Survivability of quantum well optoelectronic devices for space applications

Author(s):  
Bruce D. Evans
1992 ◽  
Vol 262 ◽  
Author(s):  
M. Ghisoni ◽  
A. W. Rivers ◽  
K. Lee ◽  
G. Parry ◽  
X. Zhang ◽  
...  

ABSTRACTIn this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device integration. We will discuss the mechanism, practical considerations and some possible applications.


1997 ◽  
Author(s):  
Alexandre Freundlich ◽  
Albert Delaney ◽  
Cedric Monier ◽  
Phillippe Renaud ◽  
Inna Serdiukova ◽  
...  

Author(s):  
S. Conesa-Boj ◽  
J. Arbiol ◽  
F. Furtmayr ◽  
C. Stark ◽  
S. Schafer ◽  
...  

2013 ◽  
Vol 102 (1) ◽  
pp. 013120 ◽  
Author(s):  
Jiri Thoma ◽  
Baolai Liang ◽  
Charles Reyner ◽  
Tomasz Ochalski ◽  
David Williams ◽  
...  

Author(s):  
Papichaya Chaisakul ◽  
Delphine Marris-Morini ◽  
Mohamed-Said Rouifed ◽  
Giovanni Isella ◽  
Daniel Chrastina ◽  
...  

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