Transient thermal design for athermal bond-line estimates

2021 ◽  
Author(s):  
Daniel P. Gillund ◽  
Keith J. Kasunic
Keyword(s):  
Bond Line ◽  
Thermal Design ◽  
Transient Thermal

Investigation Regarding Transient Compact Thermal Model for Microprocessor Packages

2019 ◽  
Author(s):  
Koji Nishi
Keyword(s):  
Power Efficiency ◽  
Thermal Model ◽  
Three Dimensional ◽  
Transient State ◽  
Thermal Control ◽  
Computing System ◽  
Thermal Simulation ◽  
Thermal Design ◽  
Time Step ◽  
Transient Thermal

Abstract In recent years, not only static thermal design but also realtime thermal control become important for power efficiency on computing systems. Three-dimensional thermal simulation is widely used to design computing system, however, it takes too long time for intelligent power and thermal management validation because it requires transient thermal simulation with very short time step. To enable rapid simulation environment, compact thermal model which can be employed with both three-dimensional transient thermal simulation and transient thermal network is required. Therefore, this research aims to establish transient state compact thermal model for microprocessor package. This paper briefly introduces steady state compact thermal model for microprocessor, which is proposed as previous work, then, points out key point to extend the model to transient state model. Transient thermal spreading resistance is emulated and the effect is checked by comparing with three-dimensional simulation.

scholarly journals Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 76
Author(s):  
Huaixin Guo ◽  
Tangsheng Chen ◽  
Shang Shi
Keyword(s):  
Power Density ◽  
Power Amplifiers ◽  
Pulse Width ◽  
Thermal Response ◽  
Thermal Design ◽  
Transient Simulation ◽  
Gate Width ◽  
Channel Temperature ◽  
Gan Hemts ◽  
Transient Thermal

The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated by using three-dimensional simulation with the finite element method. To improve the calculation accuracy, the nonlinear thermal conductivities and near-junction region of GaN chip are considered and treated appropriately in our numerical analysis. The periodic transient pulses temperature and temperature distribution are analyzed to estimate thermal response when GaN amplifiers are operating in pulsed mode with kilowatt-level power, and the relationships between channel temperatures and pulse width, gate structures, and power density of GaN device are analyzed. Results indicate that the maximal channel temperature and thermal impedance of device are considerably influenced by pulse width and power density effects, but the changes of gate fingers and gate width have no effect on channel temperature when the total gate width and active area are kept constant. Finally, the transient thermal response of GaN amplifier is measured using IR thermal photogrammetry, and the correctness and validation of the simulation model is verified. The study of transient simulation is demonstrated necessary for optimal designs of pulse-operated AlGaN/GaN HEMTs.

Thermal Design Optimization of Optoelectronic Package

2005 ◽  
Vol 2 (4) ◽  
pp. 232-239 ◽  
Author(s):  
N. Aizar A. Karim ◽  
P.A. Aswatha Narayana ◽  
K.N. Seetharamu
Keyword(s):  
Thermal Resistance ◽  
Bond Line ◽  
Thermal Design ◽  
Sensitivity Analyses ◽  
Light Emitting ◽  
Die Attach ◽  
Heat Spreaders ◽  
Design Cycle ◽  
Set Up ◽  
Reliability Performance

To drive light-emitting diodes (LEDs) at high power, the construction of the LED has to be thermally efficient to ensure good optical and reliability performance. A shorter design cycle can be achieved through a fast and accurate modeling prior to prototyping. In this paper, a surface mount (SMT) LED was modeled using a commercial computational fluid dynamics code. The simulation was done based on Joint Electron Device Engineering Council's (JEDEC's) thermal resistance measurement set-up and the model was validated using actual samples. Thermal resistance between junction to pin and between junction to ambient of LED packages were measured using a thermal resistance tester in compliance with the Electronic Industries Association/JEDEC Standard (EIA/JESD) measurement method. A series of sensitivity analyses were done based on the validated simulation and considering key design features. Effect of die-attach material at different bond line thicknesses (BLT) and adding heat spreaders having different sizes were analyzed. Applying a combination of key sensitivity analyses results, the junction to pin thermal resistance of the redesigned LED was reduced by 42%.

A Simple Model for Transient Thermal Behavior of Integrated Circuit Package Systems for Use in Determining a Thermal Design Power

2009 ◽  
Author(s):  
Julia C. Huang ◽  
Niyati Pise ◽  
Deepak Ganapathy ◽  
Shushanth Prabhu ◽  
Ethan J. Warner
Keyword(s):  
Integrated Circuit ◽  
Thermal Characteristics ◽  
Thermal Response ◽  
Thermal Design ◽  
Clear Understanding ◽  
Power Performance ◽  
Correlation Models ◽  
Electrical Analogy ◽  
Transient Thermal ◽  
Design Power

The ever increasing power dissipation requirements of electronic components and the need to provide reliable, cost-effective thermal solutions requires the thermal engineer to accurately understand the component’s thermal design power (TDP). The TDP is impacted not only by the power-performance characteristics of the component architecture, but also by the inherent thermal characteristics of the cooling solution. A suitable TDP definition thus requires a clear understanding of the transient thermal response (resistance and capacitance) of the cooling solution. In this paper, a simple electrical analogy impedance network model that resembles the component with cooling solution is developed. Correlation models to predict the resistance and capacitance for this impedance network are built based on easily available parameters such as heat sink mass, surface area, specific heat etc. The accuracies of these models are validated experimentally with data collected on a PCB with several different thermal solutions. Development of these correlation models eliminates the need for complex time consuming transient experiments to characterize the system thermal characteristics like capacitance, which allows faster, more realistic TDP definitions and ability to analyze multiple thermal designs quickly and accurately.

scholarly journals A Review On Transient Thermal Management of Electronic Devices

2021 ◽  
Author(s):  
John Mathew ◽  
Shankar Krishnan
Keyword(s):  
Thermal Management ◽  
Laser Diode ◽  
High Power ◽  
Electronic Devices ◽  
Thermal Response ◽  
Heat Pipes ◽  
Design Guidelines ◽  
Thermal Design ◽  
Laser Diode Arrays ◽  
Transient Thermal

Abstract Much effort in the area of electronics thermal management has focused on developing cooling solutions that cater to steady-state operation. However, electronic devices are increasingly being used in applications involving time-varying workloads. These include microprocessors (particularly those used in portable devices), power electronic devices such as IGBTs, and high-power semiconductor laser diode arrays. Transient thermal management solutions become essential to ensure the performance and reliability of such devices. In this review, emerging transient thermal management requirements are identified, and cooling solutions reported in the literature for such applications are presented with a focus on time scales of thermal response. Transient cooling techniques employing actively controlled two-phase microchannel heat sinks, phase change materials (PCM), heat pipes/vapor chambers, combined PCM-heat pipes/vapor chambers, and flash boiling systems are examined in detail. They are compared in terms of their thermal response times to ascertain their suitability for the thermal management of pulsed workloads associated with microprocessor chips, IGBTs, and high-power laser diode arrays. Thermal design guidelines for the selection of appropriate package level thermal resistance and capacitance combinations are also recommended.

scholarly journals Application of Thermal Network Model to Transient Thermal Analysis of Power Electronic Package Substrate

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
Masaru Ishizuka ◽  
Tomoyuki Hatakeyama ◽  
Yuichi Funawatashi ◽  
katsuhiro Koizumi
Keyword(s):  
Thermal Analysis ◽  
Transport Model ◽  
Design Tool ◽  
Thermal Design ◽  
Multichip Modules ◽  
Transient Thermal Analysis ◽  
Thermal Network ◽  
Network Method ◽  
Thermal Network Method ◽  
Transient Thermal

In recent years, there is a growing demand to have smaller and lighter electronic circuits which have greater complexity, multifunctionality, and reliability. High-density multichip packaging technology has been used in order to meet these requirements. The higher the density scale is, the larger the power dissipation per unit area becomes. Therefore, in the designing process, it has become very important to carry out the thermal analysis. However, the heat transport model in multichip modules is very complex, and its treatment is tedious and time consuming. This paper describes an application of the thermal network method to the transient thermal analysis of multichip modules and proposes a simple model for the thermal analysis of multichip modules as a preliminary thermal design tool. On the basis of the result of transient thermal analysis, the validity of the thermal network method and the simple thermal analysis model is confirmed.

Thermal Design and Analysis of VOX Microbolometer

2013 ◽  
Vol 677 ◽  
pp. 119-124
Author(s):  
Ji Xia He ◽  
Jian Liang Jiang ◽  
Aggoun Mehdi
Keyword(s):  
Thermal Analysis ◽  
Bridge Deck ◽  
Simulation Analysis ◽  
Layer Structure ◽  
Equivalent Stress ◽  
Thermal Design ◽  
Frame Rate ◽  
Heating Effect ◽  
Thermal Sensing ◽  
Transient Thermal

In this paper, we analyze the bridge legs in which the largest deformation can be observed by conducting simulation via ANSYS tools and determine the membrane layer structure, which consists of one 0.1μm thick VOX thermal sensing layer and 7 other layers with thickness ratio 0.1μmSi3N4/0.3μmSiO2/0.1μmSi3N4/0.05μmNiCr/0.1μmSi3N4/0.3μmSiO2/0.1μmSi3N4. The stable and transient thermal simulation analysis of the microbridge is performed. From the stable thermal analysis of temperature field profile, the highest and lowest temperatures and the temperature heterogeneity of the bridge deck are 300.526K, 300.468K and 0.058K respectively. The thermal time constant 6.0ms is acquired from the transient thermal analysis, which can reach the requirement of 60fps frame rate. Moreover the joule heating effect is then examined, which has influence on temperature rise of bridge deck with 3V voltage applied between two legs. The highest temperature of bridge deck is 300.354K which is lower than 300.526K caused by thermal radiation. At last, the force simulation analysis of microbridge is performed, which is based on the forementioned thermal analysis, the largest deformation is 46.45nm, the largest equivalent stress is 2.503GPa.

A System to Package Perspective on Transient Thermal Management of Electronics

2020 ◽  
Vol 142 (4) ◽  
Author(s):  
H. Peter de Bock ◽  
David Huitink ◽  
Patrick Shamberger ◽  
James Spencer Lundh ◽  
Sukwon Choi ◽  
...  
Keyword(s):  
Steady State ◽  
Thermal Management ◽  
Thermal Design ◽  
System Level ◽  
Control Mechanisms ◽  
Thermal Loads ◽  
Chip Surface ◽  
Wide Range ◽  
Transient Thermal ◽  
The Way

Abstract There are many applications throughout the military and commercial industries whose thermal profiles are dominated by intermittent and/or periodic pulsed thermal loads. Typical thermal solutions for transient applications focus on providing sufficient continuous cooling to address the peak thermal loads as if operating under steady-state conditions. Such a conservative approach guarantees satisfying the thermal challenge but can result in significant cooling overdesign, thus increasing the size, weight, and cost of the system. Confluent trends of increasing system complexity, component miniaturization, and increasing power density demands are further exacerbating the divergence of the optimal transient and steady-state solutions. Therefore, there needs to be a fundamental shift in the way thermal and packaging engineers approach design to focus on time domain heat transfer design and solutions. Due to the application-dependent nature of transient thermal solutions, it is essential to use a codesign approach such that the thermal and packaging engineers collaborate during the design phase with application and/or electronics engineers to ensure the solution meets the requirements. This paper will provide an overview of the types of transients to consider—from the transients that occur during switching at the chip surface all the way to the system-level transients which transfer heat to air. The paper will cover numerous ways of managing transient heat including phase change materials (PCMs), heat exchangers, advanced controls, and capacitance-based packaging. Moreover, synergies exist between approaches to include application of PCMs to increase thermal capacitance or active control mechanisms that are adapted and optimized for the time constants and needs of the specific application. It is the intent of this transient thermal management review to describe a wide range of areas in which transient thermal management for electronics is a factor of significance and to illustrate which specific implementations of transient thermal solutions are being explored for each area. The paper focuses on the needs and benefits of fundamentally shifting away from a steady-state thermal design mentality to one focused on transient thermal design through application-specific, codesigned approaches.

Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 166-167
Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook
Keyword(s):  
Analytical Techniques ◽  
Sample Surface ◽  
Ion Milling ◽  
Cross Sectional ◽  
Reliable Technique ◽  
Near Surface ◽  
Transmission Electron ◽  
Thin Region ◽  
Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

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