A Simple Model for Transient Thermal Behavior of Integrated Circuit Package Systems for Use in Determining a Thermal Design Power

2009 ◽  
Author(s):  
Julia C. Huang ◽  
Niyati Pise ◽  
Deepak Ganapathy ◽  
Shushanth Prabhu ◽  
Ethan J. Warner
Keyword(s):  
Integrated Circuit ◽  
Thermal Characteristics ◽  
Thermal Response ◽  
Thermal Design ◽  
Clear Understanding ◽  
Power Performance ◽  
Correlation Models ◽  
Electrical Analogy ◽  
Transient Thermal ◽  
Design Power

The ever increasing power dissipation requirements of electronic components and the need to provide reliable, cost-effective thermal solutions requires the thermal engineer to accurately understand the component’s thermal design power (TDP). The TDP is impacted not only by the power-performance characteristics of the component architecture, but also by the inherent thermal characteristics of the cooling solution. A suitable TDP definition thus requires a clear understanding of the transient thermal response (resistance and capacitance) of the cooling solution. In this paper, a simple electrical analogy impedance network model that resembles the component with cooling solution is developed. Correlation models to predict the resistance and capacitance for this impedance network are built based on easily available parameters such as heat sink mass, surface area, specific heat etc. The accuracies of these models are validated experimentally with data collected on a PCB with several different thermal solutions. Development of these correlation models eliminates the need for complex time consuming transient experiments to characterize the system thermal characteristics like capacitance, which allows faster, more realistic TDP definitions and ability to analyze multiple thermal designs quickly and accurately.

scholarly journals Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 76
Author(s):  
Huaixin Guo ◽  
Tangsheng Chen ◽  
Shang Shi
Keyword(s):  
Power Density ◽  
Power Amplifiers ◽  
Pulse Width ◽  
Thermal Response ◽  
Thermal Design ◽  
Transient Simulation ◽  
Gate Width ◽  
Channel Temperature ◽  
Gan Hemts ◽  
Transient Thermal

The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated by using three-dimensional simulation with the finite element method. To improve the calculation accuracy, the nonlinear thermal conductivities and near-junction region of GaN chip are considered and treated appropriately in our numerical analysis. The periodic transient pulses temperature and temperature distribution are analyzed to estimate thermal response when GaN amplifiers are operating in pulsed mode with kilowatt-level power, and the relationships between channel temperatures and pulse width, gate structures, and power density of GaN device are analyzed. Results indicate that the maximal channel temperature and thermal impedance of device are considerably influenced by pulse width and power density effects, but the changes of gate fingers and gate width have no effect on channel temperature when the total gate width and active area are kept constant. Finally, the transient thermal response of GaN amplifier is measured using IR thermal photogrammetry, and the correctness and validation of the simulation model is verified. The study of transient simulation is demonstrated necessary for optimal designs of pulse-operated AlGaN/GaN HEMTs.

scholarly journals Mars Pathfinder Spacecraft, Lander, and Rover Testing in Simulated Deep Space and Mars Surface Environments

1997 ◽  
Vol 40 (5) ◽  
pp. 17-26
Author(s):  
Kenneth Johnson
Keyword(s):  
Environmental Conditions ◽  
Thermal Characteristics ◽  
Thermal Response ◽  
Thermal Design ◽  
Deep Space ◽  
Test Program ◽  
Mars Rover ◽  
Surface Conditions ◽  
Wind Speeds ◽  
Mars Pathfinder

The Mars Pathfinder (MPF) spacecraft was built and tested at the Jet Propulsion Laboratory during 1995 and 1996. MPF was launched December 4, 1996, and successfully landed on Mars on July 4, 1997. The testing program required that the mission hardware be subjected to both deep space and Mars surface conditions. A series of tests were devised and conducted from January, 1995, to July, 1996, to study the thermal response of the MPF spacecraft to the environmental conditions to which it was to be exposed during the cruise phase (on the way to Mars) and the lander phase (landed on Mars). In addition, several tests were conducted to study the thermal characteristics of the Mars rover. Sojourner, under Mars surface environmental conditions. Several special test fixtures and methods were devised to simulate the required environmental conditions. Creating simulated Mars surface conditions was a challenging undertaking since the Mars surface is subjected to diurnal cycling between -20°C and -85°C, with wind speeds to 20 m/sec, occurring in an 8 torr CO2 atmosphere. This paper describes the MPF test program conducted at JPL to verify the MPF thermal design.

scholarly journals A Review On Transient Thermal Management of Electronic Devices

2021 ◽  
Author(s):  
John Mathew ◽  
Shankar Krishnan
Keyword(s):  
Thermal Management ◽  
Laser Diode ◽  
High Power ◽  
Electronic Devices ◽  
Thermal Response ◽  
Heat Pipes ◽  
Design Guidelines ◽  
Thermal Design ◽  
Laser Diode Arrays ◽  
Transient Thermal

Abstract Much effort in the area of electronics thermal management has focused on developing cooling solutions that cater to steady-state operation. However, electronic devices are increasingly being used in applications involving time-varying workloads. These include microprocessors (particularly those used in portable devices), power electronic devices such as IGBTs, and high-power semiconductor laser diode arrays. Transient thermal management solutions become essential to ensure the performance and reliability of such devices. In this review, emerging transient thermal management requirements are identified, and cooling solutions reported in the literature for such applications are presented with a focus on time scales of thermal response. Transient cooling techniques employing actively controlled two-phase microchannel heat sinks, phase change materials (PCM), heat pipes/vapor chambers, combined PCM-heat pipes/vapor chambers, and flash boiling systems are examined in detail. They are compared in terms of their thermal response times to ascertain their suitability for the thermal management of pulsed workloads associated with microprocessor chips, IGBTs, and high-power laser diode arrays. Thermal design guidelines for the selection of appropriate package level thermal resistance and capacitance combinations are also recommended.

Transient Thermal Response of Servers Through Air Temperature Measurements

2013 ◽  
Author(s):  
Hamza Salih Erden ◽  
H. Ezzat Khalifa ◽  
Roger R. Schmidt
Keyword(s):  
Thermal Conductance ◽  
Thermal Characteristics ◽  
Thermal Response ◽  
Operating Conditions ◽  
Cfd Analysis ◽  
Capacitance Measurements ◽  
Thermal Capacitance ◽  
Transient Thermal ◽  
Transient Thermal Response ◽  
Unsteady Conditions

Transient CFD analysis of data centers requires appropriate representations of the transient thermal characteristics of servers. Thermal conductance and thermal capacitance are two determining characteristics for the response of servers under unsteady conditions. Previous studies proposed tests that require detailed temperature and thermal capacitance measurements for each of the server component, requiring access to individual components inside the server. In this paper, we propose a method for obtaining the transient thermal characteristics of a server from server inlet and outlet temperatures under transient operating conditions.

scholarly journals Effects of operating and material parameters on the thermal characteristics of a wet clutch

2021 ◽  
Vol 13 (7) ◽  
pp. 168781402110341
Author(s):  
Zhigang Zhang ◽  
Ling Zou ◽  
Hang Liu ◽  
Yonglong Chen ◽  
Benzhu Zhang
Keyword(s):  
Heat Flux ◽  
Applied Pressure ◽  
Thermal Characteristics ◽  
Thermal Models ◽  
Material Parameters ◽  
Heat Transfer Theory ◽  
Friction Disk ◽  
Viscous Shear ◽  
Wet Clutch ◽  
Transient Thermal

Based on the frictional mechanism of a wet clutch, frictional models of wet clutch engagement were established using the modified Reynolds equation and the elastic contact model between frictional pairs. Then, the heat flux models for the viscous shear and asperity friction were built, and the two-dimensional transient thermal models for the separator plate, friction disk, and ATF heat convection model were deduced based on the heat transfer theory and conservation law of energy. Finally, the Runge–Kutta numerical method was used to solve the frictional and thermal models. The average temperature of the separator plate, friction disk, and ATF were calculated. The effects of operating and material parameters, such as applied pressure, initial angular velocity, friction lining permeability, surface combined roughness RMS, equivalent elastic modulus, and ATF flow, on the thermal characteristics of friction pairs and ATF during engagement, were studied. The simulation results show that the temperature characteristics of the separator plate, friction disk, and ATF depend mainly on the viscous shear and asperity friction heat flux, and that the operating and material parameters of the wet clutch also have significant impacts on the overall variation trend of the thermal characteristics of the separator plate, friction disk, and ATF.

Influence of Phonon Dispersion on Transient Thermal Response of Silicon-on-Insulator Transistors Under Self-Heating Conditions

2006 ◽  
Vol 129 (7) ◽  
pp. 790-797 ◽  
Author(s):  
Rodrigo A. Escobar ◽  
Cristina H. Amon
Keyword(s):  
Computational Models ◽  
Phonon Dispersion ◽  
Thermal Response ◽  
Domain Size ◽  
Phonon Transport ◽  
Silicon On Insulator ◽  
Nonlinear Relation ◽  
Temperature Levels ◽  
Transient Thermal ◽  
Transient Thermal Response

Lattice Boltzmann method (LBM) simulations of phonon transport are performed in one-dimensional (1D) and 2D computational models of a silicon-on-insulator transistor, in order to investigate its transient thermal response under Joule heating conditions, which cause a nonequilibrium region of high temperature known as a hotspot. Predictions from Fourier diffusion are compared to those from a gray LBM based on the Debye assumption, and from a dispersion LBM which incorporates nonlinear dispersion for all phonon branches, including explicit treatment of optical phonons without simplifying assumptions. The simulations cover the effects of hotspot size and heat pulse duration, considering a frequency-dependent heat source term. Results indicate that, for both models, a transition from a Fourier diffusion regime to a ballistic phonon transport regime occurs as the hotspot size is decreased to tens of nanometers. The transition is characterized by the appearance of boundary effects, as well as by the propagation of thermal energy in the form of multiple, superimposed phonon waves. Additionally, hotspot peak temperature levels predicted by the dispersion LBM are found to be higher than those from Fourier diffusion predictions, displaying a nonlinear relation to hotspot size, for a given, fixed, domain size.

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