Thick Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes on InP substrate

2021 ◽  
Author(s):  
Seunghyun Lee ◽  
Sri Harsha Kodati ◽  
Bingtian Guo ◽  
Andrew H. Jones ◽  
Mariah Schwartz ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Inp Substrate

scholarly journals Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
S. Lee ◽  
M. Winslow ◽  
C. H. Grein ◽  
S. H. Kodati ◽  
A. H. Jones ◽  
...  
Keyword(s):  
Theoretical Prediction ◽  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Threshold Energy ◽  
Theoretical Modeling ◽  
Experimental Demonstration ◽  
Inp Substrate ◽  
Random Alloy ◽  
Improved Performance

Abstract We report on engineering impact ionization characteristics of In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes (InGaAs/AlInAs SL APDs) on InP substrate to design and demonstrate an APD with low k-value. We design InGaAs/AlInAs SL APDs with three different SL periods (4 ML, 6 ML, and 8 ML) to achieve the same composition as Al0.4Ga0.07In0.53As quaternary random alloy (RA). The simulated results of an RA and the three SLs predict that the SLs have lower k-values than the RA because the electrons can readily reach their threshold energy for impact ionization while the holes experience the multiple valence minibands scattering. The shorter period of SL shows the lower k-value. To support the theoretical prediction, the designed 6 ML and 8 ML SLs are experimentally demonstrated. The 8 ML SL shows k-value of 0.22, which is lower than the k-value of the RA. The 6 ML SL exhibits even lower k-value than the 8 ML SL, indicating that the shorter period of the SL, the lower k-value as predicted. This work is a theoretical modeling and experimental demonstration of engineering avalanche characteristics in InGaAs/AlInAs SLs and would assist one to design the SLs with improved performance for various SWIR APD application.

Amorphous Si/SiC phototransistors and avalanche photodiodes

1991 ◽  
Vol 138 (3) ◽  
pp. 226 ◽  
Author(s):  
C.Y. Chang ◽  
J.W. Hong ◽  
Y.K. Fang
Keyword(s):  
Avalanche Photodiodes ◽  
Amorphous Si

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

2019 ◽  
Vol 9 (2) ◽  
pp. 192-197
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya
Keyword(s):  
Optical Pulse ◽  
Pulse Current ◽  
Avalanche Photodiodes ◽  
Simulation Method ◽  
Rectangular Pulse ◽  
Operating Conditions ◽  
Multiple Quantum ◽  
Material System ◽  
Frequency Responses ◽  
The Fourier Transform

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

InP/InGaAs buried-structure avalanche photodiodes

1984 ◽  
Vol 20 (4) ◽  
pp. 158 ◽  
Author(s):  
K. Yasuda ◽  
Y. Kishi ◽  
T. Shirai ◽  
T. Mikawa ◽  
S. Yamazaki ◽  
...  
Keyword(s):  
Avalanche Photodiodes

Improved figure of merit for noise in avalanche photodiodes

1988 ◽  
Vol 24 (14) ◽  
pp. 853
Author(s):  
L.D. Westbrook ◽  
M.D.A. MacBean ◽  
P.M. Rodgers
Keyword(s):  
Figure Of Merit ◽  
Avalanche Photodiodes

High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes

1988 ◽  
Vol 24 (16) ◽  
pp. 1013 ◽  
Author(s):  
Y. Matsushima ◽  
S. Akiba ◽  
Y. Kushiro
Keyword(s):  
High Reliability ◽  
Avalanche Photodiodes

scholarly journals Probing higher order correlations of the photon field with photon number resolving avalanche photodiodes

2011 ◽  
Vol 19 (14) ◽  
pp. 13268 ◽  
Author(s):  
J. F. Dynes ◽  
Z. L. Yuan ◽  
A. W. Sharpe ◽  
O. Thomas ◽  
A. J. Shields
Keyword(s):  
Avalanche Photodiodes ◽  
Photon Number ◽  
Higher Order ◽  
Photon Field
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