High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes

1988 ◽  
Vol 24 (16) ◽  
pp. 1013 ◽  
Author(s):  
Y. Matsushima ◽  
S. Akiba ◽  
Y. Kushiro
Keyword(s):  
High Reliability ◽  
Avalanche Photodiodes

High-speed, high-reliability planar-structure superlattice avalanche photodiodes for 10-Gb/s optical receivers

2000 ◽  
Vol 18 (12) ◽  
pp. 2200-2207 ◽  
Author(s):  
I. Watanabe ◽  
T. Nakata ◽  
M. Tsuji ◽  
K. Makita ◽  
T. Torikai ◽  
...  
Keyword(s):  
High Speed ◽  
High Reliability ◽  
Avalanche Photodiodes ◽  
Planar Structure ◽  
Optical Receivers

High-reliability InAlGaAs/InAlAs superlattice avalanche photodiodes for 2.5-10 Gbit/s applications

2005 ◽  
Author(s):  
Watanabe ◽  
M. Tsuji ◽  
M. Hayashi ◽  
K. Makita ◽  
K. Taguchi
Keyword(s):  
High Reliability ◽  
Avalanche Photodiodes

High-reliability and low-dark-current 10-Gb/s planar superlattice avalanche photodiodes

1997 ◽  
Vol 9 (12) ◽  
pp. 1619-1621 ◽  
Author(s):  
I. Watanabe ◽  
T. Nakata ◽  
M. Tsuji ◽  
K. Makita ◽  
K. Taguchi
Keyword(s):  
Dark Current ◽  
High Reliability ◽  
Avalanche Photodiodes

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

Amorphous Si/SiC phototransistors and avalanche photodiodes

1991 ◽  
Vol 138 (3) ◽  
pp. 226 ◽  
Author(s):  
C.Y. Chang ◽  
J.W. Hong ◽  
Y.K. Fang
Keyword(s):  
Avalanche Photodiodes ◽  
Amorphous Si
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