Development of metal-organic cluster based negative tone resist: pre-screened through the helium-ion beam prelude to extreme ultraviolet lithography (EUVL) applications

Author(s):  
Satinder Kumar Sharma ◽  
Manvendra Chauhan ◽  
Rudra Kumar ◽  
Kumar Palit ◽  
Sumit Choudhary ◽  
...  
2016 ◽  
Vol 852 ◽  
pp. 283-292
Author(s):  
Zheng Hang Xin ◽  
Chong Wang ◽  
Feng Qiu ◽  
Rong Fei Wang ◽  
Chen Li ◽  
...  

The recent process in the fabrication of the ordered Ge/Si quantum dots (QDs) is reviewed. The fabrication step generally started on the preparation of patterned substrate prepared in advance by using several interesting methods, such as photo lithography, focus ion beam (FIB), reactive ion etching (RIE), and extreme ultraviolet lithography (EUV-IL) et al, which are introduced briefly in this article. Here, we’d like to focus on the detailed process of nanosphere lithography (NSL) which has the advantages of less cost and higher product compared with the referred methods. The ordered Ge nanostructures always show as Hexagonal close-packed array on the patterned Si substrate and have the advantages of potential applications in electronic and optoelectronic devices.


2008 ◽  
Vol 516 (8) ◽  
pp. 2050-2057 ◽  
Author(s):  
Kenji Hiruma ◽  
Shinji Miyagaki ◽  
Hiromasa Yamanashi ◽  
Yuusuke Tanaka ◽  
Iwao Nishiyama

2004 ◽  
Vol 43 (36) ◽  
pp. 6545 ◽  
Author(s):  
Anton Barty ◽  
Stefan Hau-Riege ◽  
Dan Stearns ◽  
Miles Clift ◽  
Paul Mirkarimi ◽  
...  

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