Effect of interface treatment with assisted ion beam on Mo-Si multilayer formation for mask blanks for extreme ultraviolet lithography

2007 ◽  
Vol 25 (5) ◽  
pp. 1554 ◽  
Author(s):  
Kenji Hiruma ◽  
Shinji Miyagaki ◽  
Atsuko Yamaguchi ◽  
Iwao Nishiyama
Keyword(s):  
Extreme Ultraviolet ◽  
Ion Beam ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography ◽  
Multilayer Formation ◽  
Interface Treatment

Advance in the Fabrication of Ordered Ge/Si Nanostructure Array on Si Patterned Substrate by Nanosphere Lithography

2016 ◽  
Vol 852 ◽  
pp. 283-292
Author(s):  
Zheng Hang Xin ◽  
Chong Wang ◽  
Feng Qiu ◽  
Rong Fei Wang ◽  
Chen Li ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Ion Beam ◽  
Nanosphere Lithography ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography ◽  
Patterned Substrate ◽  
Hexagonal Close Packed ◽  
Potential Applications ◽  
Focus Ion Beam ◽  
Si Quantum Dots

The recent process in the fabrication of the ordered Ge/Si quantum dots (QDs) is reviewed. The fabrication step generally started on the preparation of patterned substrate prepared in advance by using several interesting methods, such as photo lithography, focus ion beam (FIB), reactive ion etching (RIE), and extreme ultraviolet lithography (EUV-IL) et al, which are introduced briefly in this article. Here, we’d like to focus on the detailed process of nanosphere lithography (NSL) which has the advantages of less cost and higher product compared with the referred methods. The ordered Ge nanostructures always show as Hexagonal close-packed array on the patterned Si substrate and have the advantages of potential applications in electronic and optoelectronic devices.

Performance and quality analysis of Mo–Si multilayers formed by ion-beam and magnetron sputtering for extreme ultraviolet lithography

2008 ◽  
Vol 516 (8) ◽  
pp. 2050-2057 ◽  
Author(s):  
Kenji Hiruma ◽  
Shinji Miyagaki ◽  
Hiromasa Yamanashi ◽  
Yuusuke Tanaka ◽  
Iwao Nishiyama
Keyword(s):  
Magnetron Sputtering ◽  
Extreme Ultraviolet ◽  
Ion Beam ◽  
Quality Analysis ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography

Repairing amplitude defects in multilayer-coated extreme-ultraviolet lithography reticles by use of a focused ion beam

2004 ◽  
Vol 43 (36) ◽  
pp. 6545 ◽  
Author(s):  
Anton Barty ◽  
Stefan Hau-Riege ◽  
Dan Stearns ◽  
Miles Clift ◽  
Paul Mirkarimi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Extreme Ultraviolet ◽  
Ion Beam ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography
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