Optical computing with photonic CMOSFETs: A new way to look into process integration, circuit, and layout designs for next generation ULSI or mixed-signal ASICs

2020 ◽  
Author(s):  
James Pan
Keyword(s):  
Process Integration ◽  
Optical Computing ◽  
Next Generation ◽  
Mixed Signal

Fast Digital to Analog Convertor using Spatial Wave Switched FETs

2014 ◽  
Vol 23 (01n02) ◽  
pp. 1450002
Author(s):  
Pawan Gogna ◽  
Murali Lingalugari ◽  
John Chandy ◽  
Evan Heller ◽  
Faquir Jain
Keyword(s):  
Analog To Digital Converters ◽  
Multiple Channels ◽  
Next Generation ◽  
Single Cycle ◽  
Mixed Signal ◽  
Analog To Digital ◽  
Digital To Analog

In this paper, we are presenting fast digital to analog convertor designs using Spatial Waveform Switched FETs (SWSFET). SWSFET was introduced by Jain et.al. These FETs have multiple channels stacked vertically. The Carrier wavefunction switches from one channel to another with the application of different gate voltages. Designs of multi-bit SRAM, logic and sequential cells using SWSFETs have been demonstrated. Here we are introducing the use of SWSFET in mixed signal architectures. Single cycle architectures for two-bit, four-bit and eight-bit analog to digital converters are presented. Four bit architecture has been simulated and results are discussed. SWSFET presents the opportunity with its multiple stacked channel features to extend the Moors law using next generation of devices.

Rethinking ASIC design with next generation lithography and process integration

2013 ◽  
Author(s):  
Kaushik Vaidyanathan ◽  
Renzhi Liu ◽  
Lars Liebmann ◽  
Kafai Lai ◽  
Andrzej Strojwas ◽  
...  
Keyword(s):  
Process Integration ◽  
Next Generation ◽  
Asic Design ◽  
Next Generation Lithography

Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI'S

1999 ◽  
Vol 565 ◽  
Author(s):  
Hideki Gomi ◽  
Koji Kishimoto ◽  
Tatsuya Usami ◽  
Ken-ichi Koyanagi ◽  
Takashi Yokoyama ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Process Integration ◽  
Low Dielectric Constant ◽  
Next Generation ◽  
Hydrogen Silsesquioxane ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Fluorinated Silicon Oxide ◽  
Low K

AbstractThe technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-μm and 0.18-μm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

Multivariate Optical Computing and Next-generation Spectrometer

2021 ◽  
Vol 49 (4) ◽  
pp. 593-601
Author(s):  
Chao-Shu DUAN ◽  
Wen-Sheng CAI ◽  
Xue-Guang SHAO
Keyword(s):  
Optical Computing ◽  
Next Generation ◽  
Multivariate Optical Computing

scholarly journals Next generation ferroelectric materials for semiconductor process integration and their applications

2021 ◽  
Vol 129 (10) ◽  
pp. 100901
Author(s):  
T. Mikolajick ◽  
S. Slesazeck ◽  
H. Mulaosmanovic ◽  
M. H. Park ◽  
S. Fichtner ◽  
...  
Keyword(s):  
Process Integration ◽  
Ferroelectric Materials ◽  
Next Generation ◽  
Semiconductor Process

Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI's

1999 ◽  
Vol 564 ◽  
Author(s):  
Hideki Gomi ◽  
Koji Kishimoto ◽  
Tatsuya Usami ◽  
Ken-ichi Koyanagi ◽  
Takashi Yokoyama ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Process Integration ◽  
Low Dielectric Constant ◽  
Next Generation ◽  
Hydrogen Silsesquioxane ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Fluorinated Silicon Oxide ◽  
Low K

AbstractThe technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-µm and 0.1 8-µm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

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