scholarly journals Next generation ferroelectric materials for semiconductor process integration and their applications

2021 ◽  
Vol 129 (10) ◽  
pp. 100901
Author(s):  
T. Mikolajick ◽  
S. Slesazeck ◽  
H. Mulaosmanovic ◽  
M. H. Park ◽  
S. Fichtner ◽  
...  
Keyword(s):  
Process Integration ◽  
Ferroelectric Materials ◽  
Next Generation ◽  
Semiconductor Process

scholarly journals Ferroelectric HfO2-based materials for next-generation ferroelectric memories

2016 ◽  
Vol 06 (02) ◽  
pp. 1630003 ◽  
Author(s):  
Zhen Fan ◽  
Jingsheng Chen ◽  
John Wang
Keyword(s):  
Random Access ◽  
Complementary Metal Oxide Semiconductor ◽  
Ferroelectric Materials ◽  
Oxide Semiconductor ◽  
Next Generation ◽  
New Class ◽  
Generation Cost ◽  
Potential Applications ◽  
Cost Efficient ◽  
Ferroelectric Memories

Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Next-generation cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO2 thin films in 2011, HfO2-based materials have aroused widespread interest in the field of FeRAM, because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO2-based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

Optical Fault Isolation and Nanoprobing Techniques for the 10 nm Technology Node and Beyond

2015 ◽  
Author(s):  
Martin von Haartman ◽  
Samia Rahman ◽  
Satyaki Ganguly ◽  
Jai Verma ◽  
Ahmad Umair ◽  
...  
Keyword(s):  
Process Development ◽  
State Of The Art ◽  
Fault Isolation ◽  
Generation Process ◽  
Next Generation ◽  
Process Technology ◽  
Technology Node ◽  
Test Chips ◽  
Semiconductor Process

Abstract Resolution of optical fault isolation (FI) and nanoprobing tools needs to keep pace with the device downscaling to be effective for semiconductor process development. In this paper we present and discuss state-of-the-art FI and nanoprobing techniques evaluated on Intel test-chips fabricated on next generation process technology. Promising results were obtained but further improvements are necessary for the 7nm node and beyond.

Rethinking ASIC design with next generation lithography and process integration

2013 ◽  
Author(s):  
Kaushik Vaidyanathan ◽  
Renzhi Liu ◽  
Lars Liebmann ◽  
Kafai Lai ◽  
Andrzej Strojwas ◽  
...  
Keyword(s):  
Process Integration ◽  
Next Generation ◽  
Asic Design ◽  
Next Generation Lithography

Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI'S

1999 ◽  
Vol 565 ◽  
Author(s):  
Hideki Gomi ◽  
Koji Kishimoto ◽  
Tatsuya Usami ◽  
Ken-ichi Koyanagi ◽  
Takashi Yokoyama ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Process Integration ◽  
Low Dielectric Constant ◽  
Next Generation ◽  
Hydrogen Silsesquioxane ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Fluorinated Silicon Oxide ◽  
Low K

AbstractThe technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-μm and 0.18-μm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI's

1999 ◽  
Vol 564 ◽  
Author(s):  
Hideki Gomi ◽  
Koji Kishimoto ◽  
Tatsuya Usami ◽  
Ken-ichi Koyanagi ◽  
Takashi Yokoyama ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Process Integration ◽  
Low Dielectric Constant ◽  
Next Generation ◽  
Hydrogen Silsesquioxane ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials ◽  
Fluorinated Silicon Oxide ◽  
Low K

AbstractThe technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-µm and 0.1 8-µm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

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