Low damage etching by Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) and Atomic Layer Etching (ALE) of III-V materials to enable next generation device performance

2020 ◽  
Author(s):  
Mark Dineen ◽  
Matthew Loveday ◽  
Andy Goodyear ◽  
Mike Cooke ◽  
Andrew Newton ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Atomic Layer ◽  
Device Performance ◽  
Next Generation ◽  
Inductively Coupled ◽  
Atomic Layer Etching

Diamond-like amorphous carbon layer film by an inductively coupled plasma system for next generation etching hard mask

2018 ◽  
Vol 663 ◽  
pp. 21-24 ◽  
Author(s):  
Se Jun Park ◽  
Dohyung Kim ◽  
Seungmoo Lee ◽  
Yongjoon Ha ◽  
Mingyoo Lim ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Inductively Coupled Plasma ◽  
Carbon Layer ◽  
Next Generation ◽  
Plasma System ◽  
Layer Film ◽  
Hard Mask ◽  
Inductively Coupled ◽  
Amorphous Carbon Layer

Inductively Coupled High-Density Plasma-Induced Etch Damage of GaN MESFETs

2000 ◽  
Vol 622 ◽  
Author(s):  
R. J. Shul ◽  
L. Zhang ◽  
A. G. Baca ◽  
C. G. Willison ◽  
J. Han ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Bombardment ◽  
Critical Dimension ◽  
High Plasma ◽  
Substrate Material ◽  
Device Performance ◽  
Inductively Coupled ◽  
Profile Control ◽  
Etch Rates ◽  
Anisotropic Etch

ABSTRACTThe fabrication of a wide variety of GaN-based photonic and electronic devices depends on dry etching, which typically requires ion-assisted removal of the substrate material. Under conditions of both high plasma flux and energetic ion bombardment, GaN etch rates greater than 0.5 νm/min and anisotropic etch profiles are readily achieved in Inductively Coupled Plasma (ICP) etch systems. Unfortunately, under these conditions plasma-induced damage often occurs. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or profile control which can limit dimensional control and reduce the utility of the process for device applications requiring anisotropic etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in source resistance, reverse breakdown voltage, transconductance, and drain saturation current for GaN MESFET structures exposed to an Ar ICP plasma. In general, device performance was sensitive to ion bombardment energy and ion flux.

scholarly journals Discharge physics and atomic layer etching in Ar/C4F6 inductively coupled plasmas with a radio frequency bias

2021 ◽  
Vol 28 (6) ◽  
pp. 063504
Author(s):  
Min Young Yoon ◽  
H. J. Yeom ◽  
Jung Hyung Kim ◽  
Won Chegal ◽  
Yong Jai Cho ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Atomic Layer ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Coupled Plasmas ◽  
Atomic Layer Etching
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