Advanced photonic BiCMOS technology with high-performance Ge photo detectors

2019 ◽  
Author(s):  
Stefan Lischke ◽  
Dieter Knoll ◽  
Christian Mai ◽  
Lars Zimmermann
Keyword(s):  
High Performance ◽  
Bicmos Technology ◽  
Photo Detectors

Recent progress in high-performance photo-detectors enabled by the pulsed laser deposition technology

2020 ◽  
Vol 8 (15) ◽  
pp. 4988-5014 ◽  
Author(s):  
Bing Wang ◽  
Zhi Bin Zhang ◽  
Shi Peng Zhong ◽  
Zhao Qiang Zheng ◽  
Ping Xu ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Future Development ◽  
High Performance ◽  
Recent Progress ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Development Trends ◽  
Recent Advances ◽  
Photo Detectors ◽  
Deposition Technology

This review introduces recent advances in the materials, fabrication and application of pulsed-laser deposition for high performance photo-detectors from an overall perspective. Challenges and future development trends are also discussed.

HIGH PERFORMANCE ECL-BiCMOS TECHNOLOGY

1993 ◽  
Vol 04 (03) ◽  
pp. 283-299
Author(s):  
T. M. LIU ◽  
R. G. SWARTZ ◽  
T.Y. CHIU
Keyword(s):  
High Speed ◽  
High Performance ◽  
Process Integration ◽  
High Density ◽  
Bipolar Devices ◽  
Bipolar Technology ◽  
Bicmos Technology ◽  
Bipolar Circuit

With the increasing maturity of conventional Bipolar-CMOS (BiCMOS) technologies, a new category of BiCMOS called "ECL-BiCMOS" or high performance BiCMOS technology has emerged. These ECL-BiCMOS technologies offer not only high density CMOS capability, but also feature high speed bipolar devices for emitter couple logic (ECL) and mixed analog/digital applications. Since many process requirements of advanced bipolar technology differ from those of CMOS, to fabricate high speed bipolar devices without compromising CMOS performance is the primary challenge. In this paper, we discuss key process integration issues and review various approaches. In particular, we describe a recently developed half-micron super self-aligned BiCMOS technology. Together with high density/high speed CMOS, multi-GHz communication bipolar circuit results are presented to show the potential of high performance BiCMOS technology.

A high-performance 0.5- mu m BiCMOS technology for fast 4-Mb SRAMs

1992 ◽  
Vol 39 (7) ◽  
pp. 1669-1679 ◽  
Author(s):  
J.D. Hayden ◽  
T.C. Mele ◽  
A.H. Perera ◽  
D. Burnett ◽  
F.W. Walczyk ◽  
...  
Keyword(s):  
High Performance ◽  
Bicmos Technology

A 0.8- mu m advanced single-poly BiCMOS technology for high-density and high-performance applications

1991 ◽  
Vol 26 (3) ◽  
pp. 422-426 ◽  
Author(s):  
A.A. Iranmanesh ◽  
V. Ilderem ◽  
M. Biswal ◽  
B. Bastani
Keyword(s):  
High Performance ◽  
High Density ◽  
Bicmos Technology

An advanced 0.4 mu m BiCMOS technology for high performance ASIC applications

2002 ◽  
Author(s):  
J. Kirchgessner ◽  
J. Teplik ◽  
V. Ilderem ◽  
D. Morgan ◽  
R. Parmar ◽  
...  
Keyword(s):  
High Performance ◽  
Bicmos Technology

RECENT ADVANCES IN BiCMOS TECHNOLOGY

1990 ◽  
Vol 01 (02) ◽  
pp. 153-167
Author(s):  
TZU-YIN CHIU ◽  
PING K. KO
Keyword(s):  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Technology Evolution ◽  
Recent Advances ◽  
Bicmos Technology ◽  
Device Structures ◽  
High Performance Systems ◽  
Technology Trend

The merits of high speed bipolar and low power VLSI CMOS are combined in BiCMOS technology. Designers are exploiting additional dimensions of flexibility and are implementing aggressive high performance systems not achievable before. Various approaches to BiCMOS integration, spanning from a single mask addition to sophisticated fully self-aligned device structures, are reviewed in this article. The philosophies behind the technology evolution in the last five years are discussed. We have also ventured to extrapolate future BiCMOS technology trend and applications.

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