A simple, high performance complementary TFSOI BiCMOS technology with excellent cross-talk isolation and high-Q inductors for low power wireless applications

Author(s):  
M. Kumar ◽  
Yue Tan ◽  
J.K.O. Sin
1990 ◽  
Vol 01 (02) ◽  
pp. 153-167
Author(s):  
TZU-YIN CHIU ◽  
PING K. KO

The merits of high speed bipolar and low power VLSI CMOS are combined in BiCMOS technology. Designers are exploiting additional dimensions of flexibility and are implementing aggressive high performance systems not achievable before. Various approaches to BiCMOS integration, spanning from a single mask addition to sophisticated fully self-aligned device structures, are reviewed in this article. The philosophies behind the technology evolution in the last five years are discussed. We have also ventured to extrapolate future BiCMOS technology trend and applications.


2000 ◽  
Vol 35 (3) ◽  
pp. 337-345 ◽  
Author(s):  
A.-S. Porret ◽  
T. Melly ◽  
C.C. Enz ◽  
E.A. Vittoz

1998 ◽  
Vol 46 (5) ◽  
pp. 505-511 ◽  
Author(s):  
C.-M. Hung ◽  
Y.-C. Ho ◽  
I.-C. Wu ◽  
K. O

—FFT architecture is the common and very efficient design in modern signal processing applications. Though so much of architectures are executed in now-a-days applications, This paper will give different approach of FFT design. In order to reduce the computation time, FFT structure is modified in the arrangement. This analyzed approach somewhat satisfies the low power, high performance and to useful in image, signal and wireless applications.


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