p-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition

2019 ◽  
Author(s):  
Vinod E. Sandana ◽  
Manijeh Razeghi ◽  
R. McClintock ◽  
D. J. Rogers ◽  
F. H. Teherani ◽  
...  
Keyword(s):  
Thin Film ◽  
Nickel Oxide ◽  
Pulsed Laser Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
P Type

P-type amorphous vanadium oxide thin film fabricated by pulsed laser deposition

2020 ◽  
Vol 59 (7) ◽  
pp. 078004
Author(s):  
Subaru Nakanishi ◽  
Yoshiharu Shinozaki ◽  
Satoru Kaneko ◽  
Akifumi Matsuda ◽  
Mamoru Yoshimoto
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Vanadium Oxide Thin Film ◽  
P Type

Field-Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition

2015 ◽  
Vol 27 (25) ◽  
pp. 3748-3754 ◽  
Author(s):  
Zhibin Yang ◽  
Jianhua Hao ◽  
Shuoguo Yuan ◽  
Shenghuang Lin ◽  
Hei Man Yau ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Ultrathin Films ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Pulsed Laser ◽  
Black Phosphorus ◽  
Laser Deposition

Electric field effect in pulsed laser deposition of epitaxial ZnO thin film

2004 ◽  
Vol 79 (4-6) ◽  
pp. 807-809 ◽  
Author(s):  
C. Hirose ◽  
Y. Matsumoto ◽  
Y. Yamamoto ◽  
H. Koinuma
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Pulsed Laser Deposition ◽  
Field Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electric Field Effect ◽  
Zno Thin Film

β-FeSi2 thin-films grown by a pulsed laser deposition

2000 ◽  
Vol 648 ◽  
Author(s):  
Shin-ichiro Uekusa ◽  
Yasuharu Watanabe ◽  
Yasuhiro Aida ◽  
Noboru Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Band Gap Energy ◽  
Laser Deposition ◽  
Carrier Distribution ◽  
Van Der Pauw ◽  
P Type

AbstractOrthorhombic β-FeSi2 thin-films were prepared on Si(100) and Si(111) substrates by a pulsed laser deposition method. When the substrate temperature was 500°C, β-FeSi2 thin-films were grown on Si(100) and Si(111) substrates. The thin-films grown on Si(100) and Si(111) substrates were polycrystalline and monocrystalline structures, respectively. The values of band-gap energy calculated from transmittance measurements were 0.71-0.72 eV. From Raman scattering measurements, it was found that the distortion due to the lattice mismatch between a β-FeSi2 thin-film and a Si substrate originates in the β-FeSi2/n-Si interface. Moreover, the fine crystals of β-FeSi2 existed in an amorphous thin-film which was grown on Si(111) substrate at room temperature (RT).From van der Pauw measurements, conduction type, carrier concentration and Hall mobility were p-type, 1018-1021 cm−3 and 200-500 cm2/Vsec, respectively. The p-n diode characteristics of these heterostructure diodes were investigated by I-V and C-V measurements. The results indicate that the carrier distribution agrees with an ideal one-sided slope junction.

Effect of oxygen pressure on the p-type conductivity of Ga, P co-doped ZnO thin film grown by pulsed laser deposition

2016 ◽  
Vol 42 (3) ◽  
pp. 4136-4142 ◽  
Author(s):  
Woo-Seok Noh ◽  
Jung-A Lee ◽  
Joon-Hyung Lee ◽  
Young-Woo Heo ◽  
Jeong-Joo Kim
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Effect Of Oxygen ◽  
P Type ◽  
Co Doped
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