Optimum ambient N[sub 2] pressure during HfAlO pulsed-laser deposition in Pt∕SBT∕HfAlO∕Si field effect transistors

2008 ◽  
Vol 26 (4) ◽  
pp. 1585 ◽  
Author(s):  
M. Takahashi ◽  
T. Horiuchi ◽  
S. Wang ◽  
Q.-H. Li ◽  
S. Sakai
Keyword(s):  
Pulsed Laser Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Pulsed Laser ◽  
Laser Deposition

Field-Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition

2015 ◽  
Vol 27 (25) ◽  
pp. 3748-3754 ◽  
Author(s):  
Zhibin Yang ◽  
Jianhua Hao ◽  
Shuoguo Yuan ◽  
Shenghuang Lin ◽  
Hei Man Yau ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Ultrathin Films ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Pulsed Laser ◽  
Black Phosphorus ◽  
Laser Deposition

Integration of BiFeO3/La0.7Sr0.3MnO3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors

2016 ◽  
Vol 4 (43) ◽  
pp. 10386-10394 ◽  
Author(s):  
Md. Shafiqur Rahman ◽  
Susmita Ghose ◽  
Liang Hong ◽  
Pradip Dhungana ◽  
Abbas Fahami ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Non Volatile Memory ◽  
Multiferroic Films

SrTiO3 films on GaAs, grown by molecular beam epitaxy, serve as buffer layers for epitaxial growth of ferromagnetic or multiferroic films using pulsed laser deposition.

Combinatorial Pulsed Laser Deposition of Pentacene Films for Field Effect Devices

2004 ◽  
Vol 25 (1) ◽  
pp. 334-338 ◽  
Author(s):  
Jun Yamaguchi ◽  
Kenji Itaka ◽  
Tomohiro Hayakawa ◽  
Keiichiro Arai ◽  
Mitsugu Yamashiro ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Field Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Field Effect Devices

Structural, Mechanical and Tribological Properties of TiN and CrN Films Deposited by Reactive Pulsed Laser Deposition

2004 ◽  
Vol 843 ◽  
Author(s):  
A. R. Phani ◽  
J. E. Krzanowski
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Stoichiometric Composition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Mechanical And Tribological Properties ◽  
Potential Applications

ABSTRACTNitride thin films have potential applications in different areas of silicon device technology, namely as diffusion barrier in metallization schemes, rectifying and ohmic contacts, and gate electrodes in field effect transistors. In the present investigation, TiN and CrN films have been deposited by reactive pulsed laser deposition technique using Ti and Cr targets at 10mTorr background pressure of N2. Si (100) and AISI 440C steel substrates were used for the present study. Films were deposited at different temperatures in the range of 200°C to 600°C. The deposited films exhibited densely packed grain, with smooth and uniform structures. X-ray Photoelectron Spectroscopy (XPS) analysis of the films showed and 50% Ti and 40% of N in TiN films, 45% of Cr and 45% of N in CrN films deposited on Si (111), with the balance mostly oxygen, indicating near stoichiometric composition of the deposited nitride thin films. Hardness of the films changed from 22 GPa at 200°C to 30 GPa at 600°C for TiN, whereas for CrN we obtained 26 GPa at 200°C to 31 GPa at 600°C. The residual stress in the films showed a change from compressive stress at 200°C to tensile stress at 600°C in both the cases. Friction coefficient of the films were measured by pin-on-disk technique for all films, up to the tested limit of 10, 000 cycles at 1 N load and found to be very high (≥ 1) in both cases.

scholarly journals Fabrication and Characterization of Two-Dimensional Layered MoS2 Thin Films by Pulsed Laser Deposition

2018 ◽  
Vol 2018 ◽  
pp. 1-5 ◽  
Author(s):  
Lei Jiao ◽  
Yuehui Wang ◽  
Yusong Zhi ◽  
Wei Cui ◽  
Zhengwei Chen ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Universal Method ◽  
Two Dimensional ◽  
Practical Applications ◽  
Device Applications ◽  
Direct Growth

Direct growth of uniform wafer-scale two-dimensional (2D) layered materials using a universal method is of vital importance for utilizing 2D layers into practical applications. Here, we report on the structural and transport properties of large-scale few-layer MoS2 back-gated field effect transistors (FETs), fabricated using conventional pulsed laser deposition (PLD) technique. Raman spectroscopy and transmission electron microscopy results confirmed that the obtained MoS2 layers on SiO2/Si substrate are multilayers. The FETs devices exhibit a relative high on/off ratio of 5 × 102 and mobility of 0.124 cm2V−1S−1. Our results suggest that the PLD would be a suitable pathway to grow 2D layers for future industrial device applications.

Electric field effect in pulsed laser deposition of epitaxial ZnO thin film

2004 ◽  
Vol 79 (4-6) ◽  
pp. 807-809 ◽  
Author(s):  
C. Hirose ◽  
Y. Matsumoto ◽  
Y. Yamamoto ◽  
H. Koinuma
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Pulsed Laser Deposition ◽  
Field Effect ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electric Field Effect ◽  
Zno Thin Film
Sign in / Sign up

Export Citation Format

Share Document