Pulsed laser deposition of the porous nickel oxide thin film at room temperature for high-rate pseudocapacitive energy storage

2012 ◽  
Vol 18 ◽  
pp. 92-95 ◽  
Author(s):  
Huanwen Wang ◽  
Yalan Wang ◽  
Xuefeng Wang
Keyword(s):  
Thin Film ◽  
Energy Storage ◽  
Nickel Oxide ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Rate ◽  
Oxide Thin Film ◽  
Porous Nickel

scholarly journals Facile Synthesis of Porous-Structured Nickel Oxide Thin Film by Pulsed Laser Deposition

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Siamak Pilban Jahromi ◽  
Nay Ming Huang ◽  
Ahmad Kamalianfar ◽  
Hong Ngee Lim ◽  
Muhamad Rasat Muhamad ◽  
...  
Keyword(s):  
Thin Film ◽  
Nickel Oxide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Nickel Foil ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grain Sizes

Porous-structured nickel oxide (PsNiO) was obtained through the oxidization of a nickel thin film. The nickel thin film was deposited using the pulsed laser deposition (PLD) method on a nickel foil as a substrate. The results show uniform PsNiO after the oxidization of the nickel thin film at 750∘C for 1 h. X-ray diffraction (XRD) indicates formation of the NiO crystalline structure. Field emission scanning electron microscopy (FESEM) reveals different morphology on the surface of the nickel foil (sample A) and on the nickel thin film (sample B). Comparison of the FESEM results after oxidization shows that the PsNiO on the nickel thin film was more regular and controllable than the NiO layer on the nickel foil. The FESEM images also show that the thickness of the nickel thin film affected the PsNiO size obtained after oxidization. This resulted from the growth of the porous structure at grain boundaries and from the grain sizes. The electrochemical properties of the PsNiO as an electrode are investigated by cyclic voltammetry (CV). These results show the effect of PsNiO size on the current of anodic peak.

scholarly journals Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

2010 ◽  
Vol 2010 ◽  
pp. 1-27 ◽  
Author(s):  
Michael Lorenz ◽  
Holger Hochmuth ◽  
Christoph Grüner ◽  
Helena Hilmer ◽  
Alexander Lajn ◽  
...  
Keyword(s):  
Thin Film ◽  
Dislocation Density ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Organic Chemical ◽  
Large Area ◽  
Low Dislocation Density

Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.

Growth, structuring and characterisation of all-oxide thin film devices prepared by pulsed laser deposition

1996 ◽  
pp. 744-751
Author(s):  
J.F.M. Cillessen ◽  
R.M. Wolf ◽  
J.B. Giesbers ◽  
P.W.M. Blom ◽  
K.-O. Grosse-Holz ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Thin Film Devices

scholarly journals High energy storage performance in lead-free BiFeO3-BaTiO3 ferroelectric thin film fabricated by pulsed laser deposition

AIP Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 085005 ◽  
Author(s):  
Yuqing Hu ◽  
Qingxiu Xie ◽  
Ruihong Liang ◽  
Xiangyong Zhao ◽  
Zhiyong Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Energy Storage ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Film ◽  
High Energy ◽  
Laser Deposition ◽  
Lead Free ◽  
Storage Performance ◽  
High Energy Storage

Microstructure of epitaxial oxide thin film heterostructures on silicon by pulsed laser deposition

1994 ◽  
Vol 64 (25) ◽  
pp. 3407-3409 ◽  
Author(s):  
Subodh G. Ghonge ◽  
Edward Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Epitaxial Oxide

Growth and optical properties of Ge oxide thin film on silicon substrate by pulsed laser deposition

2004 ◽  
Vol 331 (3-4) ◽  
pp. 248-251 ◽  
Author(s):  
Y.F. Mei ◽  
G.G. Siu ◽  
X.H. Huang ◽  
K.W. Cheah ◽  
Z.G. Dong ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Silicon Substrate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Film

Gold oxide thin film grown by pulsed laser deposition in an O2 atmosphere

2005 ◽  
Vol 472 (1-2) ◽  
pp. 49-57 ◽  
Author(s):  
Eric Irissou ◽  
Marie-Chantal Denis ◽  
Mohammed Chaker ◽  
Daniel Guay
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Gold Oxide
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