High-power LPP-EUV source with long collector mirror lifetime for semiconductor high-volume manufacturing

2019 ◽  
Author(s):  
Hakaru Mizoguchi ◽  
Hiroaki Nakarai ◽  
Tamotsu Abe ◽  
Yasufumi Kawasuji ◽  
Hiroshi Tanaka ◽  
...  
Keyword(s):  
High Power ◽  
High Volume

scholarly journals The Evolution of Manufacturing Technology for GaN Electronic Devices

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 737
Author(s):  
An-Chen Liu ◽  
Po-Tsung Tu ◽  
Catherine Langpoklakpam ◽  
Yu-Wen Huang ◽  
Ya-Ting Chang ◽  
...  
Keyword(s):  
Mobile Communications ◽  
High Power ◽  
Electronic Devices ◽  
High Volume ◽  
Cmos Technology ◽  
High Electron ◽  
Process Technology ◽  
Unit Process ◽  
Rf Power Amplifier ◽  
Device Technology

GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

High-Power EUV Source by Gigaphoton for High-Volume Manufacturing

2018 ◽  
Author(s):  
Taku Yamazaki ◽  
Hakaru Mizoguchi ◽  
Tatsuya Yanagida ◽  
Krzysztof M. Nowak ◽  
Takashi Saito
Keyword(s):  
High Power ◽  
High Volume

Adjustable mounting device for high-volume production of beam-shaping systems for high-power diode lasers

2015 ◽  
Author(s):  
Sebastian Haag ◽  
Henning Bernhardt ◽  
Olaf Rübenach ◽  
Tobias Haverkamp ◽  
Tobias Müller ◽  
...  
Keyword(s):  
High Power ◽  
Diode Lasers ◽  
High Volume ◽  
Beam Shaping ◽  
High Volume Production ◽  
Volume Production ◽  
Power Diode

High-power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing

2017 ◽  
Author(s):  
Takashi Saitou ◽  
Taku Yamazaki ◽  
Hiroaki Nakarai ◽  
Tamotsu Abe ◽  
Krzysztof M. Nowak ◽  
...  
Keyword(s):  
High Power ◽  
Semiconductor Manufacturing ◽  
High Volume

scholarly journals High Power LPP-EUV Source with Long Collector Mirror Lifetime for Semiconductor High Volume Manufacturing

2019 ◽  
Vol 32 (1) ◽  
pp. 77-86
Author(s):  
Hakaru Mizoguchi ◽  
Hiroaki Nakarai ◽  
Tamotsu Abe ◽  
Hiroshi Tanaka ◽  
Yukio Watanabe ◽  
...  
Keyword(s):  
High Power ◽  
High Volume

High-power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing

2018 ◽  
Author(s):  
Hakaru Mizoguchi ◽  
Taku Yamazaki ◽  
Takashi Saitou ◽  
Hiroaki Nakarai ◽  
Tamatsu Abe ◽  
...  
Keyword(s):  
High Power ◽  
Semiconductor Manufacturing ◽  
High Volume

830nm high power single mode DFB laser for high volume applications

2012 ◽  
Author(s):  
Pierre Doussiere ◽  
Mark Tashima ◽  
Hery Djie ◽  
Kong Weng Lee ◽  
Vince Wong ◽  
...  
Keyword(s):  
High Power ◽  
Single Mode ◽  
High Volume ◽  
Dfb Laser

High power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing

2018 ◽  
Author(s):  
Hakaru Mizoguchi ◽  
Hiroaki Nakarai ◽  
Tamotsu Abe ◽  
Krzysztof M Nowak ◽  
Yasufumi Kawasuji ◽  
...  
Keyword(s):  
High Power ◽  
Semiconductor Manufacturing ◽  
High Volume

Development of a 1,000-hp High-Power Density PMM for Deepwater Wireline Retrievable ESP Systems

2021 ◽  
Author(s):  
Samer Cheblak ◽  
Omar Benzaid
Keyword(s):  
Gulf Of Mexico ◽  
Power Density ◽  
High Power ◽  
High Volume ◽  
Short Length ◽  
High Power Density ◽  
Permanent Magnet Motor ◽  
Single Section ◽  
Development Phases ◽  
And Performance

Abstract Electric submersible pumps (ESP) are frequently used in offshore high-volume oil-producing wells that do not flow to the surface or in offshore wells with production rates that must be boosted to enhance financial returns. An operator in the deepwater Gulf of Mexico decided to install rigless ESP completions in its wells to mitigate the rig workover cost of interventions and ESP replacements by using slickline rather than more costly workover rigs. However, the solution required the development of a new single-section motor that could deliver 1,000 to 1,200 hp. This paper discusses the development and qualification of a new ultrahigh-power-density permanent magnet motor (UHPD PMM) for wireline-retrievable ESP systems installed through tubing as small as 5.5 in. The UHPD PMM design can produce significantly greater output than any other ESP technology in a single-section motor short enough to fit in a wireline lubricator. The high-power motor in a short length was achieved by integrating advanced motor technologies and materials. The challenges associated with this development are discussed along with the evaluation of tradeoffs between cost and performance. This paper also discusses the testing and qualification programs, as well as the results obtained during the various development phases.

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