High-power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing

2018 ◽  
Author(s):  
Hakaru Mizoguchi ◽  
Taku Yamazaki ◽  
Takashi Saitou ◽  
Hiroaki Nakarai ◽  
Tamatsu Abe ◽  
...  
Keyword(s):  
High Power ◽  
Semiconductor Manufacturing ◽  
High Volume

High-power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing

2017 ◽  
Author(s):  
Takashi Saitou ◽  
Taku Yamazaki ◽  
Hiroaki Nakarai ◽  
Tamotsu Abe ◽  
Krzysztof M. Nowak ◽  
...  
Keyword(s):  
High Power ◽  
Semiconductor Manufacturing ◽  
High Volume

High power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing

2018 ◽  
Author(s):  
Hakaru Mizoguchi ◽  
Hiroaki Nakarai ◽  
Tamotsu Abe ◽  
Krzysztof M Nowak ◽  
Yasufumi Kawasuji ◽  
...  
Keyword(s):  
High Power ◽  
Semiconductor Manufacturing ◽  
High Volume

scholarly journals The Evolution of Manufacturing Technology for GaN Electronic Devices

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 737
Author(s):  
An-Chen Liu ◽  
Po-Tsung Tu ◽  
Catherine Langpoklakpam ◽  
Yu-Wen Huang ◽  
Ya-Ting Chang ◽  
...  
Keyword(s):  
Mobile Communications ◽  
High Power ◽  
Electronic Devices ◽  
High Volume ◽  
Cmos Technology ◽  
High Electron ◽  
Process Technology ◽  
Unit Process ◽  
Rf Power Amplifier ◽  
Device Technology

GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

High Volume Semiconductor Manufacturing Using Nanoimprint Lithography

2020 ◽  
Author(s):  
Yukio Takabayashi ◽  
Takehiko Iwanaga ◽  
Mitsuru Hiura ◽  
Hiroshi Morohoshi ◽  
Tatsuya Hayashi ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Semiconductor Manufacturing ◽  
High Volume

High-Power EUV Source by Gigaphoton for High-Volume Manufacturing

2018 ◽  
Author(s):  
Taku Yamazaki ◽  
Hakaru Mizoguchi ◽  
Tatsuya Yanagida ◽  
Krzysztof M. Nowak ◽  
Takashi Saito
Keyword(s):  
High Power ◽  
High Volume

Nanoimprint system development and status for high-volume semiconductor manufacturing

2016 ◽  
Author(s):  
Tsuneo Takashima ◽  
Yukio Takabayashi ◽  
Naosuke Nishimura ◽  
Keiji Emoto ◽  
Takahiro Matsumoto ◽  
...  
Keyword(s):  
Semiconductor Manufacturing ◽  
System Development ◽  
High Volume

Progress in nanoimprint wafer and mask systems for high volume semiconductor manufacturing

2017 ◽  
Author(s):  
Mitsuru Hiura ◽  
Tatsuya Hayashi ◽  
Atsushi Kimura ◽  
Yoshio Suzaki ◽  
Kohei Imoto ◽  
...  
Keyword(s):  
Semiconductor Manufacturing ◽  
High Volume

Adjustable mounting device for high-volume production of beam-shaping systems for high-power diode lasers

2015 ◽  
Author(s):  
Sebastian Haag ◽  
Henning Bernhardt ◽  
Olaf Rübenach ◽  
Tobias Haverkamp ◽  
Tobias Müller ◽  
...  
Keyword(s):  
High Power ◽  
Diode Lasers ◽  
High Volume ◽  
Beam Shaping ◽  
High Volume Production ◽  
Volume Production ◽  
Power Diode
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