830nm high power single mode DFB laser for high volume applications

2012 ◽  
Author(s):  
Pierre Doussiere ◽  
Mark Tashima ◽  
Hery Djie ◽  
Kong Weng Lee ◽  
Vince Wong ◽  
...  
Keyword(s):  
High Power ◽  
Single Mode ◽  
High Volume ◽  
Dfb Laser

scholarly journals Bistable 1060-nm High-Power Single-Mode DFB Laser Diode

2015 ◽  
Vol 7 (5) ◽  
pp. 1-7 ◽  
Author(s):  
Shaoyang Tan ◽  
Mengdie Sun ◽  
Dan Lu ◽  
Ruikang Zhang ◽  
Wei Wang ◽  
...  
Keyword(s):  
Laser Diode ◽  
High Power ◽  
Single Mode ◽  
Dfb Laser

High power single-mode DFB laser diodes for 10xx nm spectral range

2012 ◽  
Author(s):  
E. A. Zibik ◽  
A. Bertrand ◽  
W. Kaiser ◽  
B. Sverdlov ◽  
J. Boucart ◽  
...  
Keyword(s):  
Spectral Range ◽  
High Power ◽  
Laser Diodes ◽  
Single Mode ◽  
Dfb Laser

scholarly journals Amplification characteristics in active tapered segmented cladding fiber with large mode area

2021 ◽  
Vol 9 ◽  
Author(s):  
Caijian Xie ◽  
Tigang Ning ◽  
Jingjing Zheng ◽  
Li Pei ◽  
Jianshuai Wang ◽  
...  
Keyword(s):  
High Power ◽  
Heat Load ◽  
Nonlinear Effects ◽  
Single Mode ◽  
Large Mode Area ◽  
High Loss ◽  
Effective Mode Area ◽  
Steady State Rate ◽  
State Rate ◽  
Mode Area

Abstract A kind of tapered segmented cladding fiber (T-SCF) with large mode area (LMA) is proposed, and the mode and amplification characteristics of T-SCFs with concave, linear, and convex tapered structures are investigated based on finite-element method (FEM) and few-mode steady-state rate equation. Simulation results indicate that the concave tapered structure can introduce high loss for high-order modes (HOMs) that is advantageous to achieve single-mode operation, whereas the convex tapered structure provides large effective mode area that can help to mitigate nonlinear effects. Meanwhile, the small-to-large amplification scheme shows further advantages on stripping off HOMs, and the large-to-small amplification scheme decreases the heat load density induced by the high-power pump. Moreover, single-mode propagation performance, effective mode area, and heat load density of the T-SCF are superior to those of tapered step index fiber (T-SIF). These theoretical model and numerical results can provide instructive suggestions for designing high-power fiber lasers and amplifiers.

scholarly journals Design of large mode area all-solid anti-resonant fiber for high-power lasers

2021 ◽  
Vol 9 ◽  
Author(s):  
Xin Zhang ◽  
Shoufei Gao ◽  
Yingying Wang ◽  
Wei Ding ◽  
Pu Wang
Keyword(s):  
High Power ◽  
Single Mode ◽  
Higher Order ◽  
Coupling Scheme ◽  
Resonant Coupling ◽  
Higher Order Modes ◽  
Mode Loss ◽  
Fiber Mode ◽  
Power Needs ◽  
Mode Area

Abstract High-power fiber lasers have experienced a dramatic development over the last decade. Further increasing the output power needs an upscaling of the fiber mode area, while maintaining a single-mode output. Here, we propose an all-solid anti-resonant fiber (ARF) structure, which ensures single-mode operation in broadband by resonantly coupling higher-order modes into the cladding. A series of fibers with core sizes ranging from 40 to 100 μm are proposed exhibiting maximum mode area exceeding 5000 μm2. Numerical simulations show this resonant coupling scheme provides a higher-order mode (mainly TE01, TM01, and HE21) suppression ratio of more than 20 dB, while keeping the fundamental mode loss lower than 1 dB/m. The proposed structure also exhibits high tolerance for core index depression.

scholarly journals The Evolution of Manufacturing Technology for GaN Electronic Devices

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 737
Author(s):  
An-Chen Liu ◽  
Po-Tsung Tu ◽  
Catherine Langpoklakpam ◽  
Yu-Wen Huang ◽  
Ya-Ting Chang ◽  
...  
Keyword(s):  
Mobile Communications ◽  
High Power ◽  
Electronic Devices ◽  
High Volume ◽  
Cmos Technology ◽  
High Electron ◽  
Process Technology ◽  
Unit Process ◽  
Rf Power Amplifier ◽  
Device Technology

GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

DFB Lasers with Tilted Waveguide for Multi-Wavelength Generation

2007 ◽  
Vol 31 ◽  
pp. 36-38 ◽  
Author(s):  
Lip Fah Chong ◽  
Jing Hua Teng ◽  
Ee Leong Lim ◽  
Norman Soo Seng Ang ◽  
J.R. Dong ◽  
...  
Keyword(s):  
Single Mode ◽  
Distributed Feedback ◽  
Couple Mode ◽  
Threshold Condition ◽  
Couple Mode Theory ◽  
Gain Margin ◽  
Ridge Waveguides ◽  
Multi Wavelength ◽  
Dfb Laser ◽  
Lasing Frequency

In this paper, we present the theoretical investigation of index-coupled distributed feedback (DFB) laser with tilted single mode ridge waveguides. By tilting part of the ridge waveguide in various degrees, DFB laser with manifold effective grating periods can be realized. The structure is analyzed using couple mode theory in matrix form based on threshold analysis. Important parameters of DFB laser like resonant frequency and threshold gains are obtained by solving the eigen-equation. The results indicate not only that the lasing frequency is modulated by the waveguide titling angle, but also large Gain Margin (GM) can be achieved at the threshold condition which enhance the stable single mode operation in index-coupled DFB laser.

High-power single mode strained-layer lasers emitting at 980 nm

1992 ◽  
Author(s):  
Hal A. Zarem ◽  
Joel S. Paslaski ◽  
Michael Mittelstein ◽  
Jeffrey E. Ungar ◽  
Israel Ury
Keyword(s):  
High Power ◽  
Single Mode ◽  
Strained Layer

Continuously tunable thin active layer and multisection DFB laser with narrow linewidth and high power

1989 ◽  
Vol 7 (10) ◽  
pp. 1504-1509 ◽  
Author(s):  
M. Fukuda ◽  
K. Sato ◽  
Y. Kondo ◽  
M. Nakao
Keyword(s):  
Active Layer ◽  
High Power ◽  
Narrow Linewidth ◽  
Dfb Laser
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