UV laser source implementing an IR pump laser with multi-element ridge waveguides

Author(s):  
Josh Aller ◽  
Justin T. Hawthorne ◽  
Tony D. Roberts ◽  
Phil Battle
2014 ◽  
Vol 939 ◽  
pp. 230-236
Author(s):  
Chien Kai Chung ◽  
Wen Tse Hsaio ◽  
Shih Feng Tseng ◽  
Kuo Cheng Huang ◽  
Ming Fei Chen

Polymethylmethacrylate (PMMA) material has excellent characteristics, such as being light weight, low cost, ease of machining, and optical quality, which are useful in numerous applications such as backlit LCD display panels, lens optics, and other photoelectric fields. Laser machining of polymerization material results in a superior machining quality, high accuracy, high speed, and high reproducibility, produces a small variety of products, reduces mold costs, and enables the rapid manufacture of products based on complex graphics by processing different depths and widths of the 3D structure. This paper presents the fabrication of symmetrical array microstructures on PMMA material by using a UV laser system. The PMMA material dimensions and thickness were 20 x 20 mm and 1 mm, respectively. Regarding the machining quality, the laser pulse energy, pulse repetition frequency, and fill spacing were adjusted. For the experiments, a semiconductor laser source (635 nm/5 mW/TEM00) and a beam profiler were used to measure the characteristics of a laser beam passing through the microstructures. The microstructure pitches and morphologies also affected the light uniformity. After laser machining, the surface morphology and the light transmittance were measured using a spectrophotometer.


Author(s):  
Alexander Sahm ◽  
Stefan Baumgärtner ◽  
Julian Hofmann ◽  
Patrick Leisching ◽  
Katrin Paschke
Keyword(s):  
Uv Laser ◽  

2007 ◽  
Vol 45 (4) ◽  
pp. 444-449 ◽  
Author(s):  
M. Tiihonen ◽  
V. Pasiskevicius ◽  
F. Laurell

1986 ◽  
Vol 90 ◽  
Author(s):  
S J C Irvine ◽  
J B Mullin ◽  
G W Blackmore ◽  
O D Dosser ◽  
H Hill

ABSTRACTMechanisms for the low temperature photo-dissociation of alkyl precursors for the epitaxial growth of CdxHg1-xTe (CMT) are discussed. The roles of vapour and surface nucleation are considered in the light of the free radical model which also can provide methods for controlling the vapour phase photochemistry. Higher quality CMT has been grown at 250 °C by using dimethyl mercury as a source of free methyl radicals. Problems encountered in reducing growth temperature for multilayer epitaxy are considered for CdTe and HgTe and conditions established for epitaxial growth at 200°C.The roles of alkyl concentration, substrate temperature, UV intensity and free radical concentration are explored. Results on the first reported growth of CdTe deposition using a cw UV laser source are compared with the arc lamp grown layers.


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