Photochemical Processes in Photo-Assisted Epitaxy of CdxHg 1-xTe

1986 ◽  
Vol 90 ◽  
Author(s):  
S J C Irvine ◽  
J B Mullin ◽  
G W Blackmore ◽  
O D Dosser ◽  
H Hill

ABSTRACTMechanisms for the low temperature photo-dissociation of alkyl precursors for the epitaxial growth of CdxHg1-xTe (CMT) are discussed. The roles of vapour and surface nucleation are considered in the light of the free radical model which also can provide methods for controlling the vapour phase photochemistry. Higher quality CMT has been grown at 250 °C by using dimethyl mercury as a source of free methyl radicals. Problems encountered in reducing growth temperature for multilayer epitaxy are considered for CdTe and HgTe and conditions established for epitaxial growth at 200°C.The roles of alkyl concentration, substrate temperature, UV intensity and free radical concentration are explored. Results on the first reported growth of CdTe deposition using a cw UV laser source are compared with the arc lamp grown layers.

2001 ◽  
Vol 231 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
K. Shalini ◽  
Anil U. Mane ◽  
S.A. Shivashankar ◽  
M. Rajeswari ◽  
S. Choopun

1994 ◽  
Vol 143 (1-2) ◽  
pp. 15-21 ◽  
Author(s):  
J. Shin ◽  
A. Verma ◽  
G.B. Stringfellow ◽  
R.W. Gedridge

1967 ◽  
Vol 45 (5) ◽  
pp. 509-513 ◽  
Author(s):  
R. A. Abramovitch ◽  
K. Kenaschuk

The ratios of isomers formed in the free-radical methylation of pyridine and 3- and 4-picoline have been determined and the results compared with the corresponding phenylations. The results support the concept that methyl radicals are more nucleophilic than phenyl radicals.


Author(s):  
Paul Dowd ◽  
Guiyong Choi ◽  
Boguslawa Wilk ◽  
Soo-Chang Choi ◽  
Songshen Zhang ◽  
...  

2016 ◽  
Vol 7 ◽  
pp. 767-775 ◽  
Author(s):  
Ayelet Ofarim ◽  
Bastian Kopp ◽  
Thomas Möller ◽  
León Martin ◽  
Johannes Boneberg ◽  
...  

We report the development of a novel method to determine the thermopower of atomic-sized gold contacts at low temperature. For these measurements a mechanically controllable break junction (MCBJ) system is used and a laser source generates a temperature difference of a few kelvins across the junction to create a thermo-voltage. Since the temperature difference enters directly into the Seebeck coefficient S = −ΔV/ΔT, the determination of the temperature plays an important role. We present a method for the determination of the temperature difference using a combination of a finite element simulation, which reveals the temperature distribution of the sample, and the measurement of the resistance change due to laser heating of sensor leads on both sides next to the junction. Our results for the measured thermopower are in agreement with recent reports in the literature.


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