Direct MOVPE growth of HgCdTe on Si substrates for long-wavelength infrared photodiodes

1996 ◽  
Author(s):  
Kenji Maruyama ◽  
Hiroji Ebe ◽  
Hironori Nishino ◽  
T. Okamoto ◽  
S. Murakami ◽  
...  
Keyword(s):  
Long Wavelength ◽  
Si Substrates ◽  
Movpe Growth ◽  
Infrared Photodiodes ◽  
Long Wavelength Infrared

Molecular beam epitaxy grown long wavelength infrared HgCdTe on compliant Si substrates

2006 ◽  
Author(s):  
Priyalal S. Wijewarnasuriya ◽  
Yuanping Chen ◽  
Gregory Brill ◽  
Nibir K. Dhar ◽  
Michael Carmody ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength ◽  
Si Substrates ◽  
Long Wavelength Infrared

Silicon-Based Long Wavelength Infrared Detectors Fabricated by Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
T. L. Lin ◽  
E. W. Jones ◽  
T. George ◽  
A. Ksendzov ◽  
M. L. Huberman
Keyword(s):  
Molecular Beam ◽  
Spectral Response ◽  
Thermionic Emission ◽  
Cutoff Wavelength ◽  
Lower Growth ◽  
Long Wavelength ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Boron Doped ◽  
Long Wavelength Infrared

ABSTRACTSiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by molecular beam epitaxial (MBE) growth of p+ SiGe layers on p-type Si substrates. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p+ SiGe layers were grown by MBE using either HBO2 or elemental boron as the dopant source. Improved crystalline quality and lower growth temperatures were achieved for boron-doped SiGe layers as compared with the HBO2-doped layers. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited and was drastically reduced as compared with that of HBO2-doped HIP detectors. The heterojunction barrier was determined to be 0.066 eV from activation energy analysis of the HIP detectors, corresponding to a 18 μm cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 μm has been characterized with corresponding quantum efficiencies of 5 – 0.1%.

High-Performance Long-Wavelength Infrared HgCdTe Focal Plane Arrays Fabricated on CdSeTe Compliant Si Substrates

2010 ◽  
Vol 57 (4) ◽  
pp. 782-787 ◽  
Author(s):  
Priyalal S. Wijewarnasuriya ◽  
Yuanping Chen ◽  
Gregory Brill ◽  
Bahram Zandi ◽  
Nibir K. Dhar
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Long Wavelength ◽  
Si Substrates ◽  
Long Wavelength Infrared

Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier

2007 ◽  
Vol 91 (16) ◽  
pp. 163511 ◽  
Author(s):  
Binh-Minh Nguyen ◽  
Darin Hoffman ◽  
Pierre-Yves Delaunay ◽  
Manijeh Razeghi
Keyword(s):  
Dark Current ◽  
Type Ii ◽  
Long Wavelength ◽  
Infrared Photodiodes ◽  
Long Wavelength Infrared
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