Dark current generation mechanisms and spectral noise current in long‐wavelength infrared photodiodes

1988 ◽  
Vol 6 (4) ◽  
pp. 2655-2663 ◽  
Author(s):  
R. E. DeWames ◽  
J. G. Pasko ◽  
E. S. Yao ◽  
A. H. B. Vanderwyck ◽  
G. M. Williams
Keyword(s):  
Dark Current ◽  
Current Generation ◽  
Long Wavelength ◽  
Noise Current ◽  
Infrared Photodiodes ◽  
Generation Mechanisms ◽  
Long Wavelength Infrared

scholarly journals Investigation of Low Frequency Noise-current Correlation for the InAs/GaSb T2SL Long-wavelength Infrared Detector

2021 ◽  
Author(s):  
Liang Wang ◽  
Liqi Zhu ◽  
Zhicheng Xu ◽  
Fangfang Wang ◽  
Jianxin Chen ◽  
...  
Keyword(s):  
Dark Current ◽  
Reverse Bias ◽  
Infrared Detector ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Long Wavelength ◽  
Noise Current ◽  
Current Correlation ◽  
Long Wavelength Infrared

Abstract In this paper, a mesa-type 256×8 long-wavelength infrared detector is prepared by using InAs/GaSb type-II superlattice material with double barrieres structure. the area of each pixel is 25×25 μm2. The cut-off wavelength and dark current density of the detector at -0.05 V bias with liquid nitrogen temperature is 11.5 μm and 4.1×10-4 A/cm2, respectively. The power spectrum of low-frequency noise (1/f noise) at different temperatures have also been fitted by the Hooge model, and the correlations with dark current are extracted subsequently. The results shown that the 1/f noise of the detector is mainly caused by the generation-recombination current at a low reverse bias, however, when the reverse bias is high, the 1/f noise should be expressed by the sum of Igr noise and Ibtb noise which is ignored in the previous research. The 1/f noise-current correlation assessed in this work can provide insights into the low frequency noise characteristics of long-wavelength T2SL InAs/GaSb detectors, and allow for a better understanding of the main source of low-frequency noise.

Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier

2007 ◽  
Vol 91 (16) ◽  
pp. 163511 ◽  
Author(s):  
Binh-Minh Nguyen ◽  
Darin Hoffman ◽  
Pierre-Yves Delaunay ◽  
Manijeh Razeghi
Keyword(s):  
Dark Current ◽  
Type Ii ◽  
Long Wavelength ◽  
Infrared Photodiodes ◽  
Long Wavelength Infrared

Dark Current Simulation and Analysis for InAs/GaSb Long wavelength Infrared Barrier Detectors

2021 ◽  
pp. 104006
Author(s):  
Su-Ning Cui ◽  
Wei-Qiang Chen ◽  
Dong-Wei Jiang ◽  
Dong-hai Wu ◽  
Guo-Wei Wang ◽  
...  
Keyword(s):  
Dark Current ◽  
Long Wavelength ◽  
Barrier Detectors ◽  
Long Wavelength Infrared

Reduction in dark current using resonant tunneling barriers in quantum dots-in-a-well long wavelength infrared photodetector

2008 ◽  
Vol 93 (13) ◽  
pp. 131115 ◽  
Author(s):  
A. V. Barve ◽  
S. Y. Shah ◽  
J. Shao ◽  
T. E. Vandervelde ◽  
R. V. Shenoi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Dark Current ◽  
Resonant Tunneling ◽  
Infrared Photodetector ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Modeling of HgCdTe LWIR detector for high operation temperature conditions

2013 ◽  
Vol 20 (2) ◽  
pp. 159-170 ◽  
Author(s):  
P. Martyniuk ◽  
W. Gawron ◽  
P. Madejczyk ◽  
A. Rogalski ◽  
J. Piotrowski
Keyword(s):  
Working Conditions ◽  
Dark Current ◽  
Operating Temperature ◽  
Applied Bias ◽  
Detector Performance ◽  
Long Wavelength ◽  
Operation Temperature ◽  
Device Architecture ◽  
Detector Structure ◽  
Long Wavelength Infrared

Abstract The paper reports on the photoelectrical performance of the long wavelength infrared (LWIR) HgCdTe high operating temperature (HOT) detector. The detector structure was simulated with commercially available software APSYS by Crosslight Inc. taking into account SRH, Auger and tunnelling currents. A detailed analysis of the detector performance such as dark current, detectivity, time response as a function of device architecture and applied bias is performed, pointing out optimal working conditions.

Direct MOVPE growth of HgCdTe on Si substrates for long-wavelength infrared photodiodes

1996 ◽  
Author(s):  
Kenji Maruyama ◽  
Hiroji Ebe ◽  
Hironori Nishino ◽  
T. Okamoto ◽  
S. Murakami ◽  
...  
Keyword(s):  
Long Wavelength ◽  
Si Substrates ◽  
Movpe Growth ◽  
Infrared Photodiodes ◽  
Long Wavelength Infrared
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