Molecular beam epitaxy grown long wavelength infrared HgCdTe on compliant Si substrates

2006 ◽  
Author(s):  
Priyalal S. Wijewarnasuriya ◽  
Yuanping Chen ◽  
Gregory Brill ◽  
Nibir K. Dhar ◽  
Michael Carmody ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength ◽  
Si Substrates ◽  
Long Wavelength Infrared

Planar n-on-p ion milled mid-wavelength and long-wavelength infrared diodes on molecular beam epitaxy vacancy-doped CdHgTe on CdZnTe

2002 ◽  
Vol 31 (7) ◽  
pp. 710-714 ◽  
Author(s):  
R. Haakenaasen ◽  
H. Steen ◽  
T. Lorentzen ◽  
L. Trosdahl-Iversen ◽  
A. D. Van Rheenen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance

2005 ◽  
Vol 34 (6) ◽  
pp. 832-838 ◽  
Author(s):  
M. Carmody ◽  
J. G. Pasko ◽  
D. Edwall ◽  
R. Bailey ◽  
J. Arias ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Detector Performance ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Silicon-Based Long Wavelength Infrared Detectors Fabricated by Molecular Beam Epitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
T. L. Lin ◽  
E. W. Jones ◽  
T. George ◽  
A. Ksendzov ◽  
M. L. Huberman
Keyword(s):  
Molecular Beam ◽  
Spectral Response ◽  
Thermionic Emission ◽  
Cutoff Wavelength ◽  
Lower Growth ◽  
Long Wavelength ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Boron Doped ◽  
Long Wavelength Infrared

ABSTRACTSiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by molecular beam epitaxial (MBE) growth of p+ SiGe layers on p-type Si substrates. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p+ SiGe layers were grown by MBE using either HBO2 or elemental boron as the dopant source. Improved crystalline quality and lower growth temperatures were achieved for boron-doped SiGe layers as compared with the HBO2-doped layers. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited and was drastically reduced as compared with that of HBO2-doped HIP detectors. The heterojunction barrier was determined to be 0.066 eV from activation energy analysis of the HIP detectors, corresponding to a 18 μm cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 μm has been characterized with corresponding quantum efficiencies of 5 – 0.1%.

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