Effect of dislocations on 1/f noise of long wavelength infrared photodiodes fabricated with HgCdTe layers grown on GaAs by metalorganic vapor phase epitaxy

1995 ◽  
Vol 24 (9) ◽  
pp. 1143-1147 ◽  
Author(s):  
S. Murakami ◽  
H. Nishino ◽  
H. Ebe ◽  
Y. Nishijima
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Long Wavelength ◽  
Infrared Photodiodes ◽  
Long Wavelength Infrared

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 268-273 ◽  
Author(s):  
M.A. Tischler ◽  
R.M. Potemski ◽  
T.F. Kuech ◽  
F. Cardone ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Acceptor Doping

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

2010 ◽  
Vol 97 (1) ◽  
pp. 013502 ◽  
Author(s):  
Kuo-Hua Chang ◽  
Jinn-Kong Sheu ◽  
Ming-Lun Lee ◽  
Shang-Ju Tu ◽  
Chih-Ciao Yang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy

1999 ◽  
Vol 75 (5) ◽  
pp. 683-685 ◽  
Author(s):  
L. Li ◽  
B.-K. Han ◽  
D. Law ◽  
C. H. Li ◽  
Q. Fu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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